Electrical properties of ZnO/GaN heterostructures and photo-responsvity of ZnO layers

D. C. Oh, T. Suzuki, H. Makino, Takashi Hanada, H. J. Ko, T. Yao

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)

Abstract

We report on the electrical properties of ZnO/GaN heterostructures and the photoresponsivity of ZnO Schottky barrier diodes for the applications of heterojunction transistors and ultraviolet photodetectors, respectivly. ZnO/GaN heterostructures exhibit a large plateau region of 6.5 V in 10 kHz capacitance-voltage curves. Moreover, it is found that a high electron density of ∼ 1018 cm-3 is accumulated at the heterointerface in depth profile. ZnO Schottky barrier diodes show a rapid increase of photocurrent of ∼102 A at the long-wavelength cutoff of 390 nm with maitaining stable diode characteristics. And, it is observed that ZnO Schottky barrier diodes respond to photosignal within 1 ∼ 2 msec with a time constant of 0.35 msec.

Original languageEnglish
Pages (from-to)946-951
Number of pages6
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number4
DOIs
Publication statusPublished - 2006 May 8
Event12th International Conference on II-VI Compounds - Warsaw, Poland
Duration: 2005 Sep 122005 Sep 16

ASJC Scopus subject areas

  • Condensed Matter Physics

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