We report on the electrical properties of ZnO/GaN heterostructures and the photoresponsivity of ZnO Schottky barrier diodes for the applications of heterojunction transistors and ultraviolet photodetectors, respectivly. ZnO/GaN heterostructures exhibit a large plateau region of 6.5 V in 10 kHz capacitance-voltage curves. Moreover, it is found that a high electron density of ∼ 1018 cm-3 is accumulated at the heterointerface in depth profile. ZnO Schottky barrier diodes show a rapid increase of photocurrent of ∼102 A at the long-wavelength cutoff of 390 nm with maitaining stable diode characteristics. And, it is observed that ZnO Schottky barrier diodes respond to photosignal within 1 ∼ 2 msec with a time constant of 0.35 msec.
|Number of pages||6|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2006 May 8|
|Event||12th International Conference on II-VI Compounds - Warsaw, Poland|
Duration: 2005 Sep 12 → 2005 Sep 16
ASJC Scopus subject areas
- Condensed Matter Physics