Electrical properties of Yttrium-Titanium oxide high- κ gate dielectric on Ge

M. K. Bera, P. Ahmet, K. Kakushima, K. Tsutsui, N. Sugii, A. Nishiyama, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The feasibility of YTiOx as a high-k gate dielectric for germanium-metal-oxide-semiconductor (MOS) devices has been investigated. The effects of different concentration of TiOx on electrical properties of YTiOx-based MOS capacitors are reported. It has been demonstrated that higher TiOx concentration in YTiOx may help to boost up dielectric constant while it causes serious damage to the interfacial properties. It has been observed that YTiOx film can effectively prevent re-growth of GeOx-based interfacial layer likely due to formation of stable Y-Ti-germanate at the interface in consequence of strong interaction of YTiOx with underlying Ge substrate. Indeed, YTiO x with 22% TiOx exhibits fairly good electrical characteristics with high dielectric constant value of κ∼21±1. The potentiality of YTiOx has further been examined with gate oxide downscaling and the results are compared with that of regularly used high-κ dielectrics promising for Ge MOSFETs.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages275-284
Number of pages10
Edition6
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

ASJC Scopus subject areas

  • Engineering(all)

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