Electrical properties of YBa2Cu3Ox films grown by liquid phase epitaxy

Sadahiko Miura, Kenji Hashimoto, Jian Guo Wen, Katumi Suzuki, Tadataka Morishita

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

YBa2Cu3Ox films were grown on MgO(lOO) substrates by liquid phase epitaxy. Their structural and electrical properties were examined. From TEM plan-view images, it is found that the film consists of large grains whose misorientation angles are less than 1°. Although the DC critical current density values decrease with increasing the film thickness, the critical current density value of 9.3 × 105 A/cm2 at 77 K is obtained for a 7 μm-thick film. A microstrip resonator at 10.8 GHz with a YBCO ground plane shows Qv values of 14200 at 77 K and 23300 at 40 K, which correspond to surface resistance values of 650 and 400 μΩ, respectively. By using a microstrip line resonator with a Ti/Au ground plane, the critical field of the film at 77 K and 10.8 GHz is estimated to be 30 Oe. The third-order intercept of the resonator with the Ti/Au ground plane is the input power of +43dBm and the output power of +30dBm at 77 K.

Original languageEnglish
Pages (from-to)1549-1555
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE81-C
Issue number10
Publication statusPublished - 1998 Jan 1
Externally publishedYes

Keywords

  • Intermodulation
  • Liquid phase epitaxy
  • Resonator
  • Surface resistance
  • Ybacuo

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Miura, S., Hashimoto, K., Wen, J. G., Suzuki, K., & Morishita, T. (1998). Electrical properties of YBa2Cu3Ox films grown by liquid phase epitaxy. IEICE Transactions on Electronics, E81-C(10), 1549-1555.