Electrical properties of Y1Ba2Cu3Ox films grown by liquid phase epitaxy

S. Miura, K. Hashimoto, T. Inoue, K. Muranaka, J. G. Wen, K. Suzuki, Y. Enomoto, T. Morishita

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Y1Ba2Cu3Ox films were grown on MgO(100) substrates by liquid phase epitaxy and their structural and electrical properties were examined. From transmission electron microscopy (TEM) plan-view images, it was found that the films consisted of large grains whose misorientation angles were less than 1°. Although d.c. critical current density values decreased with increasing film thickness, even a 7 μm-thick film showed the value of 9 × 105 A/cm2 at 77 K. An rf first penetration field of the film is estimated to be 30 Oe at 10.8 GHz and 77 K, by using a microstrip line resonator with a resonant frequency of 10.8 GHz. The third-order intercept point of the resonator is at an input power of +43 dBm and output power of + 30 dBm at 77 K. These results suggest that LPE grown Y1Ba2Cu3Ox films have superior d.c. and rf electrical properties.

Original languageEnglish
Pages (from-to)409-415
Number of pages7
JournalApplied Superconductivity
Volume6
Issue number7-9
DOIs
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 5th International Conference on Applications of Advanced Technologies in Transportation - Newport Beach, CA, USA
Duration: 1998 Apr 261998 Apr 29

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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