Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Takehisa Kurosawa, Tomoyuki Komatsu, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition were investigated. In the temperature range of 290-130 K, it is found that the W atoms in Si act as donor, and the sheet carrier concentration is proportional to the W amount. Moreover, the ionization energy is estimated to be about 340 meV on the assumption without the acceptor compensation and is scarcely affected by change of the W amount. Therefore, it is suggested that formation of the donor level is independent of degradation of crystallinity. Slope of the temperature dependence of Hall mobility was much larger than that of the uniformly donor doped Si.

Original languageEnglish
Pages (from-to)125-129
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume8
Issue number1-3 SPEC. ISS.
DOIs
Publication statusPublished - 2005 Feb 1

Keywords

  • Carrier concentration
  • Chemical vapor deposition
  • Hall mobility
  • Silicon epitaxial growth
  • Tungsten atomic layer doping

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition'. Together they form a unique fingerprint.

Cite this