TY - JOUR
T1 - Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition
AU - Kurosawa, Takehisa
AU - Komatsu, Tomoyuki
AU - Sakuraba, Masao
AU - Murota, Junichi
N1 - Funding Information:
This study was partially supported by a Grant-in-Aid for scientific research from the Ministry of Education, Culture, Sports, Science and Technology of Japan. The CVD reactor was provided by Hitachi Kokusai Electric Inc., and WF 6 by Morita Chemical Industries Co., Ltd.
PY - 2005/2
Y1 - 2005/2
N2 - Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition were investigated. In the temperature range of 290-130 K, it is found that the W atoms in Si act as donor, and the sheet carrier concentration is proportional to the W amount. Moreover, the ionization energy is estimated to be about 340 meV on the assumption without the acceptor compensation and is scarcely affected by change of the W amount. Therefore, it is suggested that formation of the donor level is independent of degradation of crystallinity. Slope of the temperature dependence of Hall mobility was much larger than that of the uniformly donor doped Si.
AB - Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition were investigated. In the temperature range of 290-130 K, it is found that the W atoms in Si act as donor, and the sheet carrier concentration is proportional to the W amount. Moreover, the ionization energy is estimated to be about 340 meV on the assumption without the acceptor compensation and is scarcely affected by change of the W amount. Therefore, it is suggested that formation of the donor level is independent of degradation of crystallinity. Slope of the temperature dependence of Hall mobility was much larger than that of the uniformly donor doped Si.
KW - Carrier concentration
KW - Chemical vapor deposition
KW - Hall mobility
KW - Silicon epitaxial growth
KW - Tungsten atomic layer doping
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U2 - 10.1016/j.mssp.2004.09.025
DO - 10.1016/j.mssp.2004.09.025
M3 - Article
AN - SCOPUS:13244298521
VL - 8
SP - 125
EP - 129
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 1-3 SPEC. ISS.
ER -