Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Takehisa Kurosawa; Tomoyuki Komatsu; Masao Sakuraba; Junichi Murota

doi:10.1016/j.mssp.2004.09.025

Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Takehisa Kurosawa, Tomoyuki Komatsu, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition were investigated. In the temperature range of 290-130 K, it is found that the W atoms in Si act as donor, and the sheet carrier concentration is proportional to the W amount. Moreover, the ionization energy is estimated to be about 340 meV on the assumption without the acceptor compensation and is scarcely affected by change of the W amount. Therefore, it is suggested that formation of the donor level is independent of degradation of crystallinity. Slope of the temperature dependence of Hall mobility was much larger than that of the uniformly donor doped Si.

Original language	English
Pages (from-to)	125-129
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	8
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mssp.2004.09.025
Publication status	Published - 2005 Feb 1

Keywords

Carrier concentration
Chemical vapor deposition
Hall mobility
Silicon epitaxial growth
Tungsten atomic layer doping

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mssp.2004.09.025

Fingerprint Dive into the research topics of 'Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition'. Together they form a unique fingerprint.

Cite this

@article{e63be4fcffd047ae9e9ef055f82e0798,

title = "Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition",

abstract = "Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition were investigated. In the temperature range of 290-130 K, it is found that the W atoms in Si act as donor, and the sheet carrier concentration is proportional to the W amount. Moreover, the ionization energy is estimated to be about 340 meV on the assumption without the acceptor compensation and is scarcely affected by change of the W amount. Therefore, it is suggested that formation of the donor level is independent of degradation of crystallinity. Slope of the temperature dependence of Hall mobility was much larger than that of the uniformly donor doped Si.",

keywords = "Carrier concentration, Chemical vapor deposition, Hall mobility, Silicon epitaxial growth, Tungsten atomic layer doping",

author = "Takehisa Kurosawa and Tomoyuki Komatsu and Masao Sakuraba and Junichi Murota",

year = "2005",

month = feb,

day = "1",

doi = "10.1016/j.mssp.2004.09.025",

language = "English",

volume = "8",

pages = "125--129",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "1-3 SPEC. ISS.",

}

TY - JOUR

T1 - Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

AU - Kurosawa, Takehisa

AU - Komatsu, Tomoyuki

AU - Sakuraba, Masao

AU - Murota, Junichi

PY - 2005/2/1

Y1 - 2005/2/1

N2 - Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition were investigated. In the temperature range of 290-130 K, it is found that the W atoms in Si act as donor, and the sheet carrier concentration is proportional to the W amount. Moreover, the ionization energy is estimated to be about 340 meV on the assumption without the acceptor compensation and is scarcely affected by change of the W amount. Therefore, it is suggested that formation of the donor level is independent of degradation of crystallinity. Slope of the temperature dependence of Hall mobility was much larger than that of the uniformly donor doped Si.

AB - Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition were investigated. In the temperature range of 290-130 K, it is found that the W atoms in Si act as donor, and the sheet carrier concentration is proportional to the W amount. Moreover, the ionization energy is estimated to be about 340 meV on the assumption without the acceptor compensation and is scarcely affected by change of the W amount. Therefore, it is suggested that formation of the donor level is independent of degradation of crystallinity. Slope of the temperature dependence of Hall mobility was much larger than that of the uniformly donor doped Si.

KW - Carrier concentration

KW - Chemical vapor deposition

KW - Hall mobility

KW - Silicon epitaxial growth

KW - Tungsten atomic layer doping

UR - http://www.scopus.com/inward/record.url?scp=13244298521&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=13244298521&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2004.09.025

DO - 10.1016/j.mssp.2004.09.025

M3 - Article

AN - SCOPUS:13244298521

VL - 8

SP - 125

EP - 129

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 1-3 SPEC. ISS.

ER -