Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating

Mutsumi Sugiyama, Hiroshi Nakai, Gaku Sugimoto, Aika Yamada, Shigefusa F. Chichibu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited by conventional RF sputtering without intentional heating were evaluated. Both the transmittance and resistivity of undoped and Li-doped NiO decreased with increasing O2 fraction in the sputtering gas, f(O2) = O2/(Ar + O2). The result is attributed to the increase in the concentration of acceptors of Ni vacancies (VNi) under oxygen-rich growth conditions. In addition to VNi, Li atom on the Ni site (LiNi) likely acts as a shallow accepter, which can explain the experimental finding that the carrier concentration of Li-doped NiO was approximately three orders of magnitude higher than that of the undoped case deposited under the same f(O2). The mobility of NiO was remarkably low (around 0.1-1.0 cm2V-1 s-1) and almost independent of f(O2) or the amount of doping, reflecting the large hole effective mass.

Original languageEnglish
Article number088003
JournalJapanese journal of applied physics
Volume55
Issue number8
DOIs
Publication statusPublished - 2016 Aug

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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