Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating

Mutsumi Sugiyama; Hiroshi Nakai; Gaku Sugimoto; Aika Yamada; Shigefusa F. Chichibu

doi:10.7567/JJAP.55.088003

Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating

Mutsumi Sugiyama, Hiroshi Nakai, Gaku Sugimoto, Aika Yamada, Shigefusa F. Chichibu

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Abstract

The fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited by conventional RF sputtering without intentional heating were evaluated. Both the transmittance and resistivity of undoped and Li-doped NiO decreased with increasing O₂ fraction in the sputtering gas, f(O₂) = O₂/(Ar + O₂). The result is attributed to the increase in the concentration of acceptors of Ni vacancies (V_Ni) under oxygen-rich growth conditions. In addition to V_Ni, Li atom on the Ni site (Li_Ni) likely acts as a shallow accepter, which can explain the experimental finding that the carrier concentration of Li-doped NiO was approximately three orders of magnitude higher than that of the undoped case deposited under the same f(O₂). The mobility of NiO was remarkably low (around 0.1-1.0 cm²V^-1 s^-1) and almost independent of f(O₂) or the amount of doping, reflecting the large hole effective mass.

Original language	English
Article number	088003
Journal	Japanese journal of applied physics
Volume	55
Issue number	8
DOIs	https://doi.org/10.7567/JJAP.55.088003
Publication status	Published - 2016 Aug

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating",

abstract = "The fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited by conventional RF sputtering without intentional heating were evaluated. Both the transmittance and resistivity of undoped and Li-doped NiO decreased with increasing O2 fraction in the sputtering gas, f(O2) = O2/(Ar + O2). The result is attributed to the increase in the concentration of acceptors of Ni vacancies (VNi) under oxygen-rich growth conditions. In addition to VNi, Li atom on the Ni site (LiNi) likely acts as a shallow accepter, which can explain the experimental finding that the carrier concentration of Li-doped NiO was approximately three orders of magnitude higher than that of the undoped case deposited under the same f(O2). The mobility of NiO was remarkably low (around 0.1-1.0 cm2V-1 s-1) and almost independent of f(O2) or the amount of doping, reflecting the large hole effective mass.",

author = "Mutsumi Sugiyama and Hiroshi Nakai and Gaku Sugimoto and Aika Yamada and Chichibu, {Shigefusa F.}",

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T1 - Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating

AU - Sugiyama, Mutsumi

AU - Nakai, Hiroshi

AU - Sugimoto, Gaku

AU - Yamada, Aika

AU - Chichibu, Shigefusa F.

PY - 2016/8

Y1 - 2016/8

N2 - The fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited by conventional RF sputtering without intentional heating were evaluated. Both the transmittance and resistivity of undoped and Li-doped NiO decreased with increasing O2 fraction in the sputtering gas, f(O2) = O2/(Ar + O2). The result is attributed to the increase in the concentration of acceptors of Ni vacancies (VNi) under oxygen-rich growth conditions. In addition to VNi, Li atom on the Ni site (LiNi) likely acts as a shallow accepter, which can explain the experimental finding that the carrier concentration of Li-doped NiO was approximately three orders of magnitude higher than that of the undoped case deposited under the same f(O2). The mobility of NiO was remarkably low (around 0.1-1.0 cm2V-1 s-1) and almost independent of f(O2) or the amount of doping, reflecting the large hole effective mass.

AB - The fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited by conventional RF sputtering without intentional heating were evaluated. Both the transmittance and resistivity of undoped and Li-doped NiO decreased with increasing O2 fraction in the sputtering gas, f(O2) = O2/(Ar + O2). The result is attributed to the increase in the concentration of acceptors of Ni vacancies (VNi) under oxygen-rich growth conditions. In addition to VNi, Li atom on the Ni site (LiNi) likely acts as a shallow accepter, which can explain the experimental finding that the carrier concentration of Li-doped NiO was approximately three orders of magnitude higher than that of the undoped case deposited under the same f(O2). The mobility of NiO was remarkably low (around 0.1-1.0 cm2V-1 s-1) and almost independent of f(O2) or the amount of doping, reflecting the large hole effective mass.

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Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating

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