TY - JOUR
T1 - Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating
AU - Sugiyama, Mutsumi
AU - Nakai, Hiroshi
AU - Sugimoto, Gaku
AU - Yamada, Aika
AU - Chichibu, Shigefusa F.
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/8
Y1 - 2016/8
N2 - The fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited by conventional RF sputtering without intentional heating were evaluated. Both the transmittance and resistivity of undoped and Li-doped NiO decreased with increasing O2 fraction in the sputtering gas, f(O2) = O2/(Ar + O2). The result is attributed to the increase in the concentration of acceptors of Ni vacancies (VNi) under oxygen-rich growth conditions. In addition to VNi, Li atom on the Ni site (LiNi) likely acts as a shallow accepter, which can explain the experimental finding that the carrier concentration of Li-doped NiO was approximately three orders of magnitude higher than that of the undoped case deposited under the same f(O2). The mobility of NiO was remarkably low (around 0.1-1.0 cm2V-1 s-1) and almost independent of f(O2) or the amount of doping, reflecting the large hole effective mass.
AB - The fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited by conventional RF sputtering without intentional heating were evaluated. Both the transmittance and resistivity of undoped and Li-doped NiO decreased with increasing O2 fraction in the sputtering gas, f(O2) = O2/(Ar + O2). The result is attributed to the increase in the concentration of acceptors of Ni vacancies (VNi) under oxygen-rich growth conditions. In addition to VNi, Li atom on the Ni site (LiNi) likely acts as a shallow accepter, which can explain the experimental finding that the carrier concentration of Li-doped NiO was approximately three orders of magnitude higher than that of the undoped case deposited under the same f(O2). The mobility of NiO was remarkably low (around 0.1-1.0 cm2V-1 s-1) and almost independent of f(O2) or the amount of doping, reflecting the large hole effective mass.
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U2 - 10.7567/JJAP.55.088003
DO - 10.7567/JJAP.55.088003
M3 - Article
AN - SCOPUS:84981298123
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
M1 - 088003
ER -