Electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystal at low temperatures

L. Q. Han, A. Kaimai, K. Yashiro, Y. Nigara, T. Kawada, J. Mizusaki, P. P. Chen, C. J. Zhong, T. Higuchi

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystals after annealing in air were characterized by the measurements of current-voltage relationship on the junction, (-) Ga-In/bulk/surface layer/Ga-In (+), at low temperatures. Here, Ga-In alloy is an ohmic electrode material. In the forward bias, the tunneling process predominate the current below 130 K, while at high temperatures, the Poole-Frenkel effect determines the current. An anomalous decrease of current under reverse bias with increasing temperature was found. This phenomenon was attributed to the variation of the Fermi energy in the surface layer and the bulk with temperature.

Original languageEnglish
Pages (from-to)431-435
Number of pages5
JournalSolid State Ionics
Volume175
Issue number1-4
DOIs
Publication statusPublished - 2004 Nov 30
EventFourteenth International Conference on Solid State Ionics - Monterey, CA., United States
Duration: 2003 Jun 222003 Jun 27

Keywords

  • SrTiO
  • Surface layer
  • Tunneling

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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