Electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystal at low temperatures

L. Q. Han; A. Kaimai; K. Yashiro; Y. Nigara; T. Kawada; J. Mizusaki; P. P. Chen; C. J. Zhong; T. Higuchi

doi:10.1016/j.ssi.2004.03.046

Electrical properties of the surface layer formed on the Nb-doped SrTiO₃ single crystal at low temperatures

L. Q. Han, A. Kaimai, K. Yashiro, Y. Nigara, T. Kawada, J. Mizusaki, P. P. Chen, C. J. Zhong, T. Higuchi

ENV - Environmental Studies for Advanced Society

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

The electrical properties of the surface layer formed on the Nb-doped SrTiO₃ single crystals after annealing in air were characterized by the measurements of current-voltage relationship on the junction, (-) Ga-In/bulk/surface layer/Ga-In (+), at low temperatures. Here, Ga-In alloy is an ohmic electrode material. In the forward bias, the tunneling process predominate the current below 130 K, while at high temperatures, the Poole-Frenkel effect determines the current. An anomalous decrease of current under reverse bias with increasing temperature was found. This phenomenon was attributed to the variation of the Fermi energy in the surface layer and the bulk with temperature.

Original language	English
Pages (from-to)	431-435
Number of pages	5
Journal	Solid State Ionics
Volume	175
Issue number	1-4
DOIs	https://doi.org/10.1016/j.ssi.2004.03.046
Publication status	Published - 2004 Nov 30
Event	Fourteenth International Conference on Solid State Ionics - Monterey, CA., United States Duration: 2003 Jun 22 → 2003 Jun 27

Keywords

SrTiO
Surface layer
Tunneling

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.ssi.2004.03.046

Cite this

Electrical properties of the surface layer formed on the Nb-doped SrTiO₃ single crystal at low temperatures. / Han, L. Q.; Kaimai, A.; Yashiro, K.; Nigara, Y.; Kawada, T.; Mizusaki, J.; Chen, P. P.; Zhong, C. J.; Higuchi, T.

In: Solid State Ionics, Vol. 175, No. 1-4, 30.11.2004, p. 431-435.

Research output: Contribution to journal › Conference article › peer-review

@article{38cad81af4914025a3c906826fa97b6c,

title = "Electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystal at low temperatures",

abstract = "The electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystals after annealing in air were characterized by the measurements of current-voltage relationship on the junction, (-) Ga-In/bulk/surface layer/Ga-In (+), at low temperatures. Here, Ga-In alloy is an ohmic electrode material. In the forward bias, the tunneling process predominate the current below 130 K, while at high temperatures, the Poole-Frenkel effect determines the current. An anomalous decrease of current under reverse bias with increasing temperature was found. This phenomenon was attributed to the variation of the Fermi energy in the surface layer and the bulk with temperature.",

keywords = "SrTiO, Surface layer, Tunneling",

author = "Han, {L. Q.} and A. Kaimai and K. Yashiro and Y. Nigara and T. Kawada and J. Mizusaki and Chen, {P. P.} and Zhong, {C. J.} and T. Higuchi",

year = "2004",

month = nov,

day = "30",

doi = "10.1016/j.ssi.2004.03.046",

language = "English",

volume = "175",

pages = "431--435",

journal = "Solid State Ionics",

issn = "0167-2738",

publisher = "Elsevier",

number = "1-4",

note = "Fourteenth International Conference on Solid State Ionics ; Conference date: 22-06-2003 Through 27-06-2003",

}

TY - JOUR

T1 - Electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystal at low temperatures

AU - Han, L. Q.

AU - Kaimai, A.

AU - Yashiro, K.

AU - Nigara, Y.

AU - Kawada, T.

AU - Mizusaki, J.

AU - Chen, P. P.

AU - Zhong, C. J.

AU - Higuchi, T.

PY - 2004/11/30

Y1 - 2004/11/30

N2 - The electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystals after annealing in air were characterized by the measurements of current-voltage relationship on the junction, (-) Ga-In/bulk/surface layer/Ga-In (+), at low temperatures. Here, Ga-In alloy is an ohmic electrode material. In the forward bias, the tunneling process predominate the current below 130 K, while at high temperatures, the Poole-Frenkel effect determines the current. An anomalous decrease of current under reverse bias with increasing temperature was found. This phenomenon was attributed to the variation of the Fermi energy in the surface layer and the bulk with temperature.

AB - The electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystals after annealing in air were characterized by the measurements of current-voltage relationship on the junction, (-) Ga-In/bulk/surface layer/Ga-In (+), at low temperatures. Here, Ga-In alloy is an ohmic electrode material. In the forward bias, the tunneling process predominate the current below 130 K, while at high temperatures, the Poole-Frenkel effect determines the current. An anomalous decrease of current under reverse bias with increasing temperature was found. This phenomenon was attributed to the variation of the Fermi energy in the surface layer and the bulk with temperature.

KW - SrTiO

KW - Surface layer

KW - Tunneling

UR - http://www.scopus.com/inward/record.url?scp=10044246183&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10044246183&partnerID=8YFLogxK

U2 - 10.1016/j.ssi.2004.03.046

DO - 10.1016/j.ssi.2004.03.046

M3 - Conference article

AN - SCOPUS:10044246183

VL - 175

SP - 431

EP - 435

JO - Solid State Ionics

JF - Solid State Ionics

SN - 0167-2738

IS - 1-4

T2 - Fourteenth International Conference on Solid State Ionics

Y2 - 22 June 2003 through 27 June 2003

ER -