Electrical properties of the patterned Co/Cu/Co sub-micron dots using a probe contact

J. Hayakawa, M. Fujimori, S. Heike, M. Ishibashi, T. Hashizume, K. Ito, H. Ohno

Research output: Contribution to journalArticle

Abstract

Using conductive atomic force microscopy, we investigated the electrical properties of patterned Co/Cu/Co submicron dots which were aligned at 200 nm intervals. As a result, we observed the I-V character having hysteresis behavior; it was apparently due to a magnetization reversal caused by the spin transfer torque. We demonstrated that the probe technique was able to be one of the candidates of the future high-areal-density magnetic recording devices.

Original languageEnglish
Pages (from-to)e1443-e1445
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2004 May 1

Keywords

  • Co/Cu/Co sub-micron dot
  • Probe contact
  • Spin transfer torque

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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