Electrical properties of tert-butyl-substituted germanium cluster

Akira Watanabe; Masashi Unno; Fusao Hojo; Takao Miwa

doi:10.1246/cl.2001.1092

Electrical properties of tert-butyl-substituted germanium cluster

Akira Watanabe, Masashi Unno, Fusao Hojo, Takao Miwa

Division of Process and System Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Conductive amorphous germanium film was prepared by heat treatmenl of tert-butyl-substituted germanium cluster at 200 °C and the crystallization was observed above 500 °C, which are remarkably lower temperatures than those of n-propyl-substituted germanium cluster.

Original language	English
Pages (from-to)	1092-1093
Number of pages	2
Journal	Chemistry Letters
Issue number	11
DOIs	https://doi.org/10.1246/cl.2001.1092
Publication status	Published - 2001

ASJC Scopus subject areas

Chemistry(all)

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10.1246/cl.2001.1092

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title = "Electrical properties of tert-butyl-substituted germanium cluster",

abstract = "Conductive amorphous germanium film was prepared by heat treatmenl of tert-butyl-substituted germanium cluster at 200 °C and the crystallization was observed above 500 °C, which are remarkably lower temperatures than those of n-propyl-substituted germanium cluster.",

author = "Akira Watanabe and Masashi Unno and Fusao Hojo and Takao Miwa",

year = "2001",

doi = "10.1246/cl.2001.1092",

language = "English",

pages = "1092--1093",

journal = "Chemistry Letters",

issn = "0366-7022",

publisher = "Chemical Society of Japan",

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TY - JOUR

T1 - Electrical properties of tert-butyl-substituted germanium cluster

AU - Watanabe, Akira

AU - Unno, Masashi

AU - Hojo, Fusao

AU - Miwa, Takao

PY - 2001

Y1 - 2001

N2 - Conductive amorphous germanium film was prepared by heat treatmenl of tert-butyl-substituted germanium cluster at 200 °C and the crystallization was observed above 500 °C, which are remarkably lower temperatures than those of n-propyl-substituted germanium cluster.

AB - Conductive amorphous germanium film was prepared by heat treatmenl of tert-butyl-substituted germanium cluster at 200 °C and the crystallization was observed above 500 °C, which are remarkably lower temperatures than those of n-propyl-substituted germanium cluster.

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U2 - 10.1246/cl.2001.1092

DO - 10.1246/cl.2001.1092

M3 - Article

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SP - 1092

EP - 1093

JO - Chemistry Letters

JF - Chemistry Letters

SN - 0366-7022

IS - 11

ER -

Electrical properties of tert-butyl-substituted germanium cluster

Abstract

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