Electrical properties of silicon nitride using high density and low plasma damage PECVD formed at 400°C

Y. Nakao, A. Teramoto, T. Watanabe, R. Kuroda, T. Suwa, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

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Engineering & Materials Science