TY - GEN
T1 - Electrical properties of silicon nitride using high density and low plasma damage PECVD formed at 400°C
AU - Nakao, Y.
AU - Teramoto, A.
AU - Watanabe, T.
AU - Kuroda, R.
AU - Suwa, T.
AU - Sugawa, S.
AU - Ohmi, T.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - High chemical etching resistance is strongly required for silicon nitride at low temperature such as 400°C or below in order to apply to the gate spacer, the contact etching stop layer, because various new materials which are thermally instable are introduced in order to improve the performance of MISFETs. High HF resistance of silicon nitride at the sidewall has been achieved by the plasma enhanced chemical vapor deposition using microwave excited high density plasma at 400°C. In this work, the electrical properties of those silicon nitride formed with various conditions were investigated for the gate spacer. The trap density that are attributed to the Si dangling bonds decreases as the SiH 4 flow rate decreases in this process. The leakage current can be suppressed by decreasing the SiH 4 flow rate below 3.0 sccm, because the stoichiometric silicon nitride can be formed in this range of process condition.
AB - High chemical etching resistance is strongly required for silicon nitride at low temperature such as 400°C or below in order to apply to the gate spacer, the contact etching stop layer, because various new materials which are thermally instable are introduced in order to improve the performance of MISFETs. High HF resistance of silicon nitride at the sidewall has been achieved by the plasma enhanced chemical vapor deposition using microwave excited high density plasma at 400°C. In this work, the electrical properties of those silicon nitride formed with various conditions were investigated for the gate spacer. The trap density that are attributed to the Si dangling bonds decreases as the SiH 4 flow rate decreases in this process. The leakage current can be suppressed by decreasing the SiH 4 flow rate below 3.0 sccm, because the stoichiometric silicon nitride can be formed in this range of process condition.
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U2 - 10.1149/1.3700907
DO - 10.1149/1.3700907
M3 - Conference contribution
AN - SCOPUS:84869071205
SN - 9781566779555
T3 - ECS Transactions
SP - 421
EP - 428
BT - Dielectrics for Nanosystems 5
T2 - 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Y2 - 6 May 2012 through 10 May 2012
ER -