Electrical properties of silicon nitride using high density and low plasma damage PECVD formed at 400°C

Y. Nakao, A. Teramoto, T. Watanabe, R. Kuroda, T. Suwa, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

High chemical etching resistance is strongly required for silicon nitride at low temperature such as 400°C or below in order to apply to the gate spacer, the contact etching stop layer, because various new materials which are thermally instable are introduced in order to improve the performance of MISFETs. High HF resistance of silicon nitride at the sidewall has been achieved by the plasma enhanced chemical vapor deposition using microwave excited high density plasma at 400°C. In this work, the electrical properties of those silicon nitride formed with various conditions were investigated for the gate spacer. The trap density that are attributed to the Si dangling bonds decreases as the SiH 4 flow rate decreases in this process. The leakage current can be suppressed by decreasing the SiH 4 flow rate below 3.0 sccm, because the stoichiometric silicon nitride can be formed in this range of process condition.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages421-428
Number of pages8
Edition3
DOIs
Publication statusPublished - 2012
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Publication series

NameECS Transactions
Number3
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period12/5/612/5/10

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Electrical properties of silicon nitride using high density and low plasma damage PECVD formed at 400°C'. Together they form a unique fingerprint.

Cite this