@inproceedings{603a1d7c476e4ba09b711c272cd4721b,
title = "Electrical properties of rare-earth oxides and La2O3 stacked gate dielectrics",
abstract = "The electrical properties of La2O3 gate dielectrics stacked with other rare-earth oxides were investigated. A reduction of fixed charged defects in the dielectric film was observed in CeOx/La 2O3/NdOx compared to that of La 2O3/NdOx. Obtained equivalent oxide thickness (EOT) was smaller for CeOx/ La2O3/NdOx gate stack compare to that of CeOx/ La2O3 gate stack while the estimated fixed charged defects in the dielectric film were almost same. An EOT of 0.45 nm was achieved by using Nd-oxide as a capping layer. Our results show that the combination of several rare-earth oxides is useful in improving the electrical properties of high-k gate stacks.",
author = "M. Kouda and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",
year = "2011",
doi = "10.1149/1.3633291",
language = "English",
isbn = "9781566779074",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "119--124",
booktitle = "ULSI Process Integration 7",
edition = "7",
note = "7th Symposium on ULSI Process Integration - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",
}