Electrical properties of rare-earth oxides and La2O3 stacked gate dielectrics

M. Kouda; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3633291

Electrical properties of rare-earth oxides and La₂O₃ stacked gate dielectrics

M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The electrical properties of La₂O₃ gate dielectrics stacked with other rare-earth oxides were investigated. A reduction of fixed charged defects in the dielectric film was observed in CeO_x/La ₂O₃/NdO_x compared to that of La ₂O₃/NdO_x. Obtained equivalent oxide thickness (EOT) was smaller for CeOx/ La₂O₃/NdO_x gate stack compare to that of CeO_x/ La₂O₃ gate stack while the estimated fixed charged defects in the dielectric film were almost same. An EOT of 0.45 nm was achieved by using Nd-oxide as a capping layer. Our results show that the combination of several rare-earth oxides is useful in improving the electrical properties of high-k gate stacks.

Original language	English
Title of host publication	ULSI Process Integration 7
Publisher	Electrochemical Society Inc.
Pages	119-124
Number of pages	6
Edition	7
ISBN (Electronic)	9781607682615
ISBN (Print)	9781566779074
DOIs	https://doi.org/10.1149/1.3633291
Publication status	Published - 2011
Externally published	Yes
Event	7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States Duration: 2011 Oct 9 → 2011 Oct 14

Publication series

Name	ECS Transactions
Number	7
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	7th Symposium on ULSI Process Integration - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	11/10/9 → 11/10/14

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3633291

Cite this

Kouda, M, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2011, Electrical properties of rare-earth oxides and La₂O₃ stacked gate dielectrics. in ULSI Process Integration 7. 7 edn, ECS Transactions, no. 7, vol. 41, Electrochemical Society Inc., pp. 119-124, 7th Symposium on ULSI Process Integration - 220th ECS Meeting, Boston, MA, United States, 11/10/9. https://doi.org/10.1149/1.3633291

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abstract = "The electrical properties of La2O3 gate dielectrics stacked with other rare-earth oxides were investigated. A reduction of fixed charged defects in the dielectric film was observed in CeOx/La 2O3/NdOx compared to that of La 2O3/NdOx. Obtained equivalent oxide thickness (EOT) was smaller for CeOx/ La2O3/NdOx gate stack compare to that of CeOx/ La2O3 gate stack while the estimated fixed charged defects in the dielectric film were almost same. An EOT of 0.45 nm was achieved by using Nd-oxide as a capping layer. Our results show that the combination of several rare-earth oxides is useful in improving the electrical properties of high-k gate stacks.",

author = "M. Kouda and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",

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series = "ECS Transactions",

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AU - Kouda, M.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

PY - 2011

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N2 - The electrical properties of La2O3 gate dielectrics stacked with other rare-earth oxides were investigated. A reduction of fixed charged defects in the dielectric film was observed in CeOx/La 2O3/NdOx compared to that of La 2O3/NdOx. Obtained equivalent oxide thickness (EOT) was smaller for CeOx/ La2O3/NdOx gate stack compare to that of CeOx/ La2O3 gate stack while the estimated fixed charged defects in the dielectric film were almost same. An EOT of 0.45 nm was achieved by using Nd-oxide as a capping layer. Our results show that the combination of several rare-earth oxides is useful in improving the electrical properties of high-k gate stacks.

AB - The electrical properties of La2O3 gate dielectrics stacked with other rare-earth oxides were investigated. A reduction of fixed charged defects in the dielectric film was observed in CeOx/La 2O3/NdOx compared to that of La 2O3/NdOx. Obtained equivalent oxide thickness (EOT) was smaller for CeOx/ La2O3/NdOx gate stack compare to that of CeOx/ La2O3 gate stack while the estimated fixed charged defects in the dielectric film were almost same. An EOT of 0.45 nm was achieved by using Nd-oxide as a capping layer. Our results show that the combination of several rare-earth oxides is useful in improving the electrical properties of high-k gate stacks.

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