Electrical properties of rare-earth oxides and La 2O 3 stacked gate dielectrics

M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical properties of La 2O 3 gate dielectrics stacked with other rare-earth oxides were investigated. A reduction of fixed charged defects in the dielectric film was observed in CeO x/La 2O 3/NdO x compared to that of La 2O 3/NdO x. Obtained equivalent oxide thickness (EOT) was smaller for CeOx/ La 2O 3/NdO x gate stack compare to that of CeO x/ La 2O 3 gate stack while the estimated fixed charged defects in the dielectric film were almost same. An EOT of 0.45 nm was achieved by using Nd-oxide as a capping layer. Our results show that the combination of several rare-earth oxides is useful in improving the electrical properties of high-k gate stacks.

Original languageEnglish
Title of host publicationULSI Process Integration 7
Pages119-124
Number of pages6
Edition7
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number7
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Electrical properties of rare-earth oxides and La <sub>2</sub>O <sub>3</sub> stacked gate dielectrics'. Together they form a unique fingerprint.

Cite this