Electrical properties of polycrystalline CaB6 under high pressure and low temperature

Yan Li; Jie Yang; Xiaoyan Cui; Tingjing Hu; Cailong Liu; Yongjun Tian; Hongwu Liu; Yonghao Han; Chunxiao Gao

doi:10.1002/pssb.201001106

Electrical properties of polycrystalline CaB₆ under high pressure and low temperature

Yan Li, Jie Yang, Xiaoyan Cui, Tingjing Hu, Cailong Liu, Yongjun Tian, Hongwu Liu, Yonghao Han, Chunxiao Gao

SCI - Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Carrier behavior of CaB₆ powders was investigated by using in situ Hall effect measurement under high pressure and resistivity property was detected under low temperature with microcircuit fabricated on diamond anvil cell. Carrier behavior was analyzed by carrier concentration and Hall coefficient. The variation of defects in the grain boundary region lead the carrier concentration and the Hall coefficient in the decompression process are much lower than that in the compression process. The resistivity depended temperature at various pressures indicated that CaB₆ has a typical metallic behavior under high pressure.

Original language	English
Pages (from-to)	1162-1165
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	248
Issue number	5
DOIs	https://doi.org/10.1002/pssb.201001106
Publication status	Published - 2011 May

Keywords

Carrier concentration
Diamond anvil cell
In situ Hall effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssb.201001106

Cite this

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title = "Electrical properties of polycrystalline CaB6 under high pressure and low temperature",

abstract = "Carrier behavior of CaB6 powders was investigated by using in situ Hall effect measurement under high pressure and resistivity property was detected under low temperature with microcircuit fabricated on diamond anvil cell. Carrier behavior was analyzed by carrier concentration and Hall coefficient. The variation of defects in the grain boundary region lead the carrier concentration and the Hall coefficient in the decompression process are much lower than that in the compression process. The resistivity depended temperature at various pressures indicated that CaB6 has a typical metallic behavior under high pressure.",

keywords = "Carrier concentration, Diamond anvil cell, In situ Hall effect",

author = "Yan Li and Jie Yang and Xiaoyan Cui and Tingjing Hu and Cailong Liu and Yongjun Tian and Hongwu Liu and Yonghao Han and Chunxiao Gao",

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TY - JOUR

T1 - Electrical properties of polycrystalline CaB6 under high pressure and low temperature

AU - Li, Yan

AU - Yang, Jie

AU - Cui, Xiaoyan

AU - Hu, Tingjing

AU - Liu, Cailong

AU - Tian, Yongjun

AU - Liu, Hongwu

AU - Han, Yonghao

AU - Gao, Chunxiao

PY - 2011/5

Y1 - 2011/5

N2 - Carrier behavior of CaB6 powders was investigated by using in situ Hall effect measurement under high pressure and resistivity property was detected under low temperature with microcircuit fabricated on diamond anvil cell. Carrier behavior was analyzed by carrier concentration and Hall coefficient. The variation of defects in the grain boundary region lead the carrier concentration and the Hall coefficient in the decompression process are much lower than that in the compression process. The resistivity depended temperature at various pressures indicated that CaB6 has a typical metallic behavior under high pressure.

AB - Carrier behavior of CaB6 powders was investigated by using in situ Hall effect measurement under high pressure and resistivity property was detected under low temperature with microcircuit fabricated on diamond anvil cell. Carrier behavior was analyzed by carrier concentration and Hall coefficient. The variation of defects in the grain boundary region lead the carrier concentration and the Hall coefficient in the decompression process are much lower than that in the compression process. The resistivity depended temperature at various pressures indicated that CaB6 has a typical metallic behavior under high pressure.

KW - Carrier concentration

KW - Diamond anvil cell

KW - In situ Hall effect

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JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

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