Abstract
Carrier behavior of CaB6 powders was investigated by using in situ Hall effect measurement under high pressure and resistivity property was detected under low temperature with microcircuit fabricated on diamond anvil cell. Carrier behavior was analyzed by carrier concentration and Hall coefficient. The variation of defects in the grain boundary region lead the carrier concentration and the Hall coefficient in the decompression process are much lower than that in the compression process. The resistivity depended temperature at various pressures indicated that CaB6 has a typical metallic behavior under high pressure.
Original language | English |
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Pages (from-to) | 1162-1165 |
Number of pages | 4 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 248 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2011 May |
Keywords
- Carrier concentration
- Diamond anvil cell
- In situ Hall effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics