Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

Youngcheon Jeong, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at the N amount of 5×1013 cm-2/layer. Sheet carrier concentration in the temperature region higher than 160 K drastically increases with increase of the measurement temperature. The ionization energy of the donor level is estimated about 150-180 meV and almost independent of the N amount. Measured Hall mobility is as high as that of the uniformly P-doped Si with the P concentration of 1016-1017 cm-3 in the measurement temperature range of 160-300 K.

Original languageEnglish
Pages (from-to)121-124
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume8
Issue number1-3 SPEC. ISS.
DOIs
Publication statusPublished - 2005 Feb 1

Keywords

  • Carrier concentration
  • Chemical vapor deposition
  • Hall mobility
  • Nitrogen atomic layer doping
  • Silicon epitaxial growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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