Electrical properties of lanthanum-scandate gate dielectric directly deposited on Ge

M. K. Bera, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    The electrical performance of both Ge MOSCAP and MOSFET with LaScO x high-k gate dielectric directly deposited on Ge (100) without utilizing any interfacial passivation layer has been investigated. This study also reports about the control of Vfb/Vth through ScO concentration. Accordingly, a relatively larger hysteresis and higher density of interface states with ScO concentration having lower or higher than 50% along with increasing annealing temperatures were observed in general as a result of deterioration caused by the formation of GeOx at the interface in conjunction with more pronounce intermixing or Ge out-diffusion into LaScO x. Nevertheless, an ultrathin Si passivation layer is found to be advantageous to inhibit Ge incorporation into high-k bulk in the form of GeOx, thereby diminishing the resultant oxide charge trapping as well as improves the thermal stabilities of the entire LaScOx/Ge MOS structures. Besides, reasonably good electrical properties of Ge p-MOSFETs with LaScOx gate dielectric have been demonstrated.

    Original languageEnglish
    Title of host publicationECS Transactions
    Pages67-77
    Number of pages11
    Volume25
    Edition6
    DOIs
    Publication statusPublished - 2009
    Event7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
    Duration: 2009 Oct 52009 Oct 7

    Other

    Other7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
    Country/TerritoryAustria
    CityVienna
    Period09/10/509/10/7

    ASJC Scopus subject areas

    • Engineering(all)

    Fingerprint

    Dive into the research topics of 'Electrical properties of lanthanum-scandate gate dielectric directly deposited on Ge'. Together they form a unique fingerprint.

    Cite this