Abstract
Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n+ and p+ GaAs epilayers. For originally n+ epilayers, this resistivity enhancement is maintained after annealing as high as 800°C. However this enhancement disappears after annealing at above 650°C for p+ epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 µm or less, and is attractive for a device fabrication process to electrically isolate integrated elements.
| Original language | English |
|---|---|
| Pages (from-to) | L965-L967 |
| Journal | Japanese journal of applied physics |
| Volume | 24 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1985 Dec |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Hirayama, Y., & Okamoto, H. (1985). Electrical properties of Ga ion beam implanted GaAs epilayer. Japanese journal of applied physics, 24(12), L965-L967. https://doi.org/10.1143/JJAP.24.L965