TY - JOUR
T1 - Electrical properties of Ga ion beam implanted GaAs epilayer
AU - Hirayama, Yoshiro
AU - Okamoto, Hiroshi
PY - 1985/12
Y1 - 1985/12
N2 - Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n+ and p+ GaAs epilayers. For originally n+ epilayers, this resistivity enhancement is maintained after annealing as high as 800°C. However this enhancement disappears after annealing at above 650°C for p+ epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 µm or less, and is attractive for a device fabrication process to electrically isolate integrated elements.
AB - Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n+ and p+ GaAs epilayers. For originally n+ epilayers, this resistivity enhancement is maintained after annealing as high as 800°C. However this enhancement disappears after annealing at above 650°C for p+ epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 µm or less, and is attractive for a device fabrication process to electrically isolate integrated elements.
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U2 - 10.1143/JJAP.24.L965
DO - 10.1143/JJAP.24.L965
M3 - Article
AN - SCOPUS:0022234624
VL - 24
SP - L965-L967
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
ER -