Electrical properties of defect-fluorite phase in the system R2O3-Ta2O5 (R Gd, Y, Er and Yb)

Shin Kim, Masatomo Yashima, Masato Kakihana, Masahiro Yoshimura

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The electrical properties of the new fluorite-type phase R0.8Ta0.2O1.7{right angle, 90 degree} ⊥0.3 in the system R2O3-Ta2O5 (R Gd, Y, Er and Yb) were studied. This fluorite phase had a p-type conductivity above 10-3 atm of oxygen partial pressure in the temperature range 650-1250 °C. In the oxygen partial pressure range between 10-4 and 10-21 atm, it showed an ionic conductivity which could occur by the diffusion of oxygen ions through oxygen vacancies.

Original languageEnglish
Pages (from-to)72-74
Number of pages3
JournalJournal of Alloys and Compounds
Volume192
Issue number1-2
DOIs
Publication statusPublished - 1993 Feb 23
Externally publishedYes

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Electrical properties of defect-fluorite phase in the system R<sub>2</sub>O<sub>3</sub>-Ta<sub>2</sub>O<sub>5</sub> (R Gd, Y, Er and Yb)'. Together they form a unique fingerprint.

  • Cite this