@inproceedings{e42e59acc33d4ff29983f3ee08bf7b0b,
title = "Electrical properties of CeOx/La2O3 stack as a gate dielectric for advanced MOSFET technology",
abstract = "The electrical properties of CeOx/La2O3 gate stack have been investigated. The leakage current at the EOT around 1.0 nm was suppressed by one order of magnitude by introducing the CeO x/La2O3 stack, compared to that obtained in the La2O3 single layer. MOSFETs with gate stack of the CeOx/La2O3 stack were fabricated, and no significant degradation in mobility or interface state density has been observed.",
author = "Miyuki Kouda and Kiichi Tachi and Kuniyuki Kakshima and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Chandorkar, {A. N.} and Takeo Hattori and Hiroshi Iwai",
year = "2009",
doi = "10.1149/1,2981597",
language = "English",
isbn = "9781566776516",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "153--160",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6",
edition = "5",
note = "Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 15-10-2008",
}