Electrical properties of CeOx/La2O3 stack as a gate dielectric for advanced MOSFET technology

Miyuki Kouda; Kiichi Tachi; Kuniyuki Kakshima; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; A. N. Chandorkar; Takeo Hattori; Hiroshi Iwai

doi:10.1149/1,2981597

Electrical properties of CeO_x/La₂O₃ stack as a gate dielectric for advanced MOSFET technology

Miyuki Kouda, Kiichi Tachi, Kuniyuki Kakshima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, A. N. Chandorkar, Takeo Hattori, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

The electrical properties of CeO_x/La₂O₃ gate stack have been investigated. The leakage current at the EOT around 1.0 nm was suppressed by one order of magnitude by introducing the CeO _x/La₂O₃ stack, compared to that obtained in the La₂O₃ single layer. MOSFETs with gate stack of the CeO_x/La₂O₃ stack were fabricated, and no significant degradation in mobility or interface state density has been observed.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Publisher	Electrochemical Society Inc.
Pages	153-160
Number of pages	8
Edition	5
ISBN (Print)	9781566776516
DOIs	https://doi.org/10.1149/1,2981597
Publication status	Published - 2009
Externally published	Yes
Event	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 13 → 2008 Oct 15

Publication series

Name	ECS Transactions
Number	5
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	08/10/13 → 08/10/15

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1,2981597

Cite this

Kouda, M., Tachi, K., Kakshima, K., Ahmet, P., Tsutsui, K., Sugii, N., Chandorkar, A. N., Hattori, T., & Iwai, H. (2009). Electrical properties of CeO_x/La₂O₃ stack as a gate dielectric for advanced MOSFET technology. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 153-160). (ECS Transactions; Vol. 16, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/1,2981597

Electrical properties of CeO_x/La₂O₃ stack as a gate dielectric for advanced MOSFET technology. / Kouda, Miyuki; Tachi, Kiichi; Kakshima, Kuniyuki; Ahmet, Parhat; Tsutsui, Kazuo; Sugii, Nobuyuki; Chandorkar, A. N.; Hattori, Takeo; Iwai, Hiroshi.

ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. Electrochemical Society Inc., 2009. p. 153-160 (ECS Transactions; Vol. 16, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kouda, M, Tachi, K, Kakshima, K, Ahmet, P, Tsutsui, K, Sugii, N, Chandorkar, AN, Hattori, T & Iwai, H 2009, Electrical properties of CeO_x/La₂O₃ stack as a gate dielectric for advanced MOSFET technology. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 edn, ECS Transactions, no. 5, vol. 16, Electrochemical Society Inc., pp. 153-160, Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting, Honolulu, HI, United States, 08/10/13. https://doi.org/10.1149/1,2981597

Kouda, Miyuki ; Tachi, Kiichi ; Kakshima, Kuniyuki ; Ahmet, Parhat ; Tsutsui, Kazuo ; Sugii, Nobuyuki ; Chandorkar, A. N. ; Hattori, Takeo ; Iwai, Hiroshi. / Electrical properties of CeO_x/La₂O₃ stack as a gate dielectric for advanced MOSFET technology. ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. Electrochemical Society Inc., 2009. pp. 153-160 (ECS Transactions; 5).

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