Electrical properties of bulk BSCCO/IN interfaces

Kazuo Michishita, Yumi Ikuhara, Yuuichi Ikuhara, Yukio Kubo, Kenichi Takahashi, Yoshimasa Kamisada, Tetsuji Ogawa

    Research output: Contribution to journalArticle

    Abstract

    The influence of Ag-doping and Ag sputtering on electrical properties of bulk BSCCO/In interfaces were examined. In Ag-doped and undoped samples, Rc were ∼ 10-6 ω cm2 and ∼ 10-3 ω cm2, respectively. While Rc of Ag-doped samples showed positive dependency on magnetic field, there was no dependency in undoped samples. Ar ion beams ethcing, Ag sputtering with moderate film thickness and anneal treatments to an undoped sample significantly decreased Rc (∼ 10-6 ω cm2).

    Original languageEnglish
    Pages (from-to)2293-2294
    Number of pages2
    JournalPhysica C: Superconductivity and its applications
    Volume185-189
    Issue numberPART 4
    DOIs
    Publication statusPublished - 1991 Dec 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering

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  • Cite this

    Michishita, K., Ikuhara, Y., Ikuhara, Y., Kubo, Y., Takahashi, K., Kamisada, Y., & Ogawa, T. (1991). Electrical properties of bulk BSCCO/IN interfaces. Physica C: Superconductivity and its applications, 185-189(PART 4), 2293-2294. https://doi.org/10.1016/0921-4534(91)91271-5