Electrical properties of black phosphorus single crystals prepared by the bismuth-flux method

Mamoru Baba, Fukunori Izumida, Akira Morita, Yoji Koike, Tetsuro Fukase

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Systematic measurement of the electrical transport phenomena of black phosphorus grown by the all-closed bismuth- flux method has been performed in the range from room temperature down to 0.5 K for the electrical resistivity and down to 1.5 K for the Hall effect and the magnetoresistance effect. These samples exhibited p-type conduction with two types of acceptors, of which activation energies were 26.1 meV and 11.8 meV, respectively. The effective concentrations of acceptors were typically 1.36 x 1015 cm-3 for the deeper level and 0.44 x 1015 cm-3 for the shallower level. The maximum of the Hall mobility was found to be 2 x 104 cm2/Vs around 20 K. A new observation of n-type conduction below about 7 K for some of these samples suggested the existence of a surface inversion layer as a channel of electron conduction.

Original languageEnglish
Pages (from-to)1753-1758
Number of pages6
JournalJapanese journal of applied physics
Volume30
Issue number8
DOIs
Publication statusPublished - 1991 Aug

Keywords

  • Acceptor level
  • Black phosphorus
  • Electrical conductivity
  • Elemental semiconductor
  • Hall effect
  • Hall mobility
  • Layered material
  • Magnetoresistance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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