Abstract
Systematic measurement of the electrical transport phenomena of black phosphorus grown by the all-closed bismuth- flux method has been performed in the range from room temperature down to 0.5 K for the electrical resistivity and down to 1.5 K for the Hall effect and the magnetoresistance effect. These samples exhibited p-type conduction with two types of acceptors, of which activation energies were 26.1 meV and 11.8 meV, respectively. The effective concentrations of acceptors were typically 1.36 x 1015 cm-3 for the deeper level and 0.44 x 1015 cm-3 for the shallower level. The maximum of the Hall mobility was found to be 2 x 104 cm2/Vs around 20 K. A new observation of n-type conduction below about 7 K for some of these samples suggested the existence of a surface inversion layer as a channel of electron conduction.
Original language | English |
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Pages (from-to) | 1753-1758 |
Number of pages | 6 |
Journal | Japanese journal of applied physics |
Volume | 30 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1991 Aug |
Externally published | Yes |
Keywords
- Acceptor level
- Black phosphorus
- Electrical conductivity
- Elemental semiconductor
- Hall effect
- Hall mobility
- Layered material
- Magnetoresistance
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)