The relationship between electrical properties of B-doped poly-Si 1-x-yGexCy and heat-treatment conditions has been investigated. Poly-Si1-x-yGexCy films with average B concentration of 1.5×1020 cm-3 were deposited on thermally oxidized Si(100) at 500-650 °C in a SiH 4-GeH3-SiH3CH3-H2 gas mixture by an ultraclean hot-wall low-pressure chemical vapor deposition, followed by 11B+ ion implantation and heat-treatment. The resistivity decreases with increasing Ge fraction and increases with increasing C fraction. Hall measurement and X-ray diffraction results suggest that the disordered regions near grain boundaries are reduced by the existence of Ge and density of the carrier traps at grain boundaries is increased by C segregation at grain boundaries. From the results of subsequent heat-treatment at lower temperature, it is also suggested that B segregation at grain boundaries is suppressed by the existence of C at grain boundaries.
|Number of pages||8|
|Publication status||Published - 2004 Dec 1|
|Event||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
Duration: 2004 Oct 3 → 2004 Oct 8
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||04/10/3 → 04/10/8|
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