Electrical properties of B-doped polycrystalline Si1-x-yGe xCy film deposited by ultraclean low-pressure CVD

Hyunyoung Shim; Masao Sakuraba; Junichi Murota

Electrical properties of B-doped polycrystalline Si1-x-yGe xCy film deposited by ultraclean low-pressure CVD

Hyunyoung Shim, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Contribution to conference › Paper › peer-review

Abstract

The relationship between electrical properties of B-doped poly-Si _1-x-yGe_xC_y and heat-treatment conditions has been investigated. Poly-Si_1-x-yGe_xC_y films with average B concentration of 1.5×10²⁰ cm^-3 were deposited on thermally oxidized Si(100) at 500-650 °C in a SiH ₄-GeH₃-SiH₃CH₃-H₂ gas mixture by an ultraclean hot-wall low-pressure chemical vapor deposition, followed by ¹¹B⁺ ion implantation and heat-treatment. The resistivity decreases with increasing Ge fraction and increases with increasing C fraction. Hall measurement and X-ray diffraction results suggest that the disordered regions near grain boundaries are reduced by the existence of Ge and density of the carrier traps at grain boundaries is increased by C segregation at grain boundaries. From the results of subsequent heat-treatment at lower temperature, it is also suggested that B segregation at grain boundaries is suppressed by the existence of C at grain boundaries.

Original language	English
Pages	261-268
Number of pages	8
Publication status	Published - 2004 Dec 1
Event	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8

Other

Other	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
Country	United States
City	Honolulu, HI
Period	04/10/3 → 04/10/8

ASJC Scopus subject areas

Engineering(all)

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Electrical properties of B-doped polycrystalline Si1-x-yGe xCy film deposited by ultraclean low-pressure CVD. / Shim, Hyunyoung; Sakuraba, Masao; Murota, Junichi.

2004. 261-268 Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

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title = "Electrical properties of B-doped polycrystalline Si1-x-yGe xCy film deposited by ultraclean low-pressure CVD",

abstract = "The relationship between electrical properties of B-doped poly-Si 1-x-yGexCy and heat-treatment conditions has been investigated. Poly-Si1-x-yGexCy films with average B concentration of 1.5×1020 cm-3 were deposited on thermally oxidized Si(100) at 500-650 °C in a SiH 4-GeH3-SiH3CH3-H2 gas mixture by an ultraclean hot-wall low-pressure chemical vapor deposition, followed by 11B+ ion implantation and heat-treatment. The resistivity decreases with increasing Ge fraction and increases with increasing C fraction. Hall measurement and X-ray diffraction results suggest that the disordered regions near grain boundaries are reduced by the existence of Ge and density of the carrier traps at grain boundaries is increased by C segregation at grain boundaries. From the results of subsequent heat-treatment at lower temperature, it is also suggested that B segregation at grain boundaries is suppressed by the existence of C at grain boundaries.",

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N2 - The relationship between electrical properties of B-doped poly-Si 1-x-yGexCy and heat-treatment conditions has been investigated. Poly-Si1-x-yGexCy films with average B concentration of 1.5×1020 cm-3 were deposited on thermally oxidized Si(100) at 500-650 °C in a SiH 4-GeH3-SiH3CH3-H2 gas mixture by an ultraclean hot-wall low-pressure chemical vapor deposition, followed by 11B+ ion implantation and heat-treatment. The resistivity decreases with increasing Ge fraction and increases with increasing C fraction. Hall measurement and X-ray diffraction results suggest that the disordered regions near grain boundaries are reduced by the existence of Ge and density of the carrier traps at grain boundaries is increased by C segregation at grain boundaries. From the results of subsequent heat-treatment at lower temperature, it is also suggested that B segregation at grain boundaries is suppressed by the existence of C at grain boundaries.

AB - The relationship between electrical properties of B-doped poly-Si 1-x-yGexCy and heat-treatment conditions has been investigated. Poly-Si1-x-yGexCy films with average B concentration of 1.5×1020 cm-3 were deposited on thermally oxidized Si(100) at 500-650 °C in a SiH 4-GeH3-SiH3CH3-H2 gas mixture by an ultraclean hot-wall low-pressure chemical vapor deposition, followed by 11B+ ion implantation and heat-treatment. The resistivity decreases with increasing Ge fraction and increases with increasing C fraction. Hall measurement and X-ray diffraction results suggest that the disordered regions near grain boundaries are reduced by the existence of Ge and density of the carrier traps at grain boundaries is increased by C segregation at grain boundaries. From the results of subsequent heat-treatment at lower temperature, it is also suggested that B segregation at grain boundaries is suppressed by the existence of C at grain boundaries.

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