TY - GEN
T1 - Electrical properties and microstructures of ultraviolet transparent Ga2O3 thin films
AU - Shigetoshi, Yasuhiro
AU - Tsukimoto, Susumu
AU - Takeda, Hidehisa
AU - Ito, Kazuhiro
AU - Murakami, Masanori
PY - 2007/1/1
Y1 - 2007/1/1
N2 - The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O 3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500°C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga 2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.
AB - The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O 3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500°C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga 2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.
KW - Electrical resistivity
KW - Gallium oxide (GaO)
KW - Microstructure
KW - Partial oxygen pressure
KW - Sputter deposition
KW - Thin film
KW - Transparent
UR - http://www.scopus.com/inward/record.url?scp=38349172728&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=38349172728&partnerID=8YFLogxK
U2 - 10.4028/0-87849-462-6.1233
DO - 10.4028/0-87849-462-6.1233
M3 - Conference contribution
AN - SCOPUS:38349172728
SN - 0878494626
SN - 9780878494620
T3 - Materials Science Forum
SP - 1233
EP - 1236
BT - Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6
PB - Trans Tech Publications Ltd
T2 - 6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6
Y2 - 5 November 2007 through 9 November 2007
ER -