Electrical properties and microstructures of ultraviolet transparent Ga2O3 thin films

Yasuhiro Shigetoshi; Susumu Tsukimoto; Hidehisa Takeda; Kazuhiro Ito; Masanori Murakami

doi:10.4028/0-87849-462-6.1233

Electrical properties and microstructures of ultraviolet transparent Ga₂O₃ thin films

Yasuhiro Shigetoshi, Susumu Tsukimoto, Hidehisa Takeda, Kazuhiro Ito, Masanori Murakami

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The electrical and optical properties, and microstructures of 100 nm-thick Ga₂O₃ films fabricated on Al₂O ₃(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500°C during deposition. With increasing the oxygen partial pressure, the structures of the Ga₂O₃ films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga₂O₃). The transmittance of the Ga ₂O₃ films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga₂O₃ films would be required.

Original language	English
Title of host publication	Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6
Publisher	Trans Tech Publications Ltd
Pages	1233-1236
Number of pages	4
Edition	PART 2
ISBN (Print)	0878494626, 9780878494620
DOIs	https://doi.org/10.4028/0-87849-462-6.1233
Publication status	Published - 2007 Jan 1
Event	6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6 - Jeju, Korea, Republic of Duration: 2007 Nov 5 → 2007 Nov 9

Publication series

Name	Materials Science Forum
Number	PART 2
Volume	561-565
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6
Country	Korea, Republic of
City	Jeju
Period	07/11/5 → 07/11/9

Keywords

Electrical resistivity
Gallium oxide (GaO)
Microstructure
Partial oxygen pressure
Sputter deposition
Thin film
Transparent

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Shigetoshi, Y., Tsukimoto, S., Takeda, H., Ito, K., & Murakami, M. (2007). Electrical properties and microstructures of ultraviolet transparent Ga₂O₃ thin films. In Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6 (PART 2 ed., pp. 1233-1236). (Materials Science Forum; Vol. 561-565, No. PART 2). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-462-6.1233

Electrical properties and microstructures of ultraviolet transparent Ga₂O₃ thin films. / Shigetoshi, Yasuhiro; Tsukimoto, Susumu; Takeda, Hidehisa; Ito, Kazuhiro; Murakami, Masanori.

Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6. PART 2. ed. Trans Tech Publications Ltd, 2007. p. 1233-1236 (Materials Science Forum; Vol. 561-565, No. PART 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shigetoshi, Y, Tsukimoto, S, Takeda, H, Ito, K & Murakami, M 2007, Electrical properties and microstructures of ultraviolet transparent Ga₂O₃ thin films. in Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6. PART 2 edn, Materials Science Forum, no. PART 2, vol. 561-565, Trans Tech Publications Ltd, pp. 1233-1236, 6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6, Jeju, Korea, Republic of, 07/11/5. https://doi.org/10.4028/0-87849-462-6.1233

Shigetoshi Y, Tsukimoto S, Takeda H, Ito K, Murakami M. Electrical properties and microstructures of ultraviolet transparent Ga₂O₃ thin films. In Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6. PART 2 ed. Trans Tech Publications Ltd. 2007. p. 1233-1236. (Materials Science Forum; PART 2). https://doi.org/10.4028/0-87849-462-6.1233

Shigetoshi, Yasuhiro ; Tsukimoto, Susumu ; Takeda, Hidehisa ; Ito, Kazuhiro ; Murakami, Masanori. / Electrical properties and microstructures of ultraviolet transparent Ga₂O₃ thin films. Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6. PART 2. ed. Trans Tech Publications Ltd, 2007. pp. 1233-1236 (Materials Science Forum; PART 2).

@inproceedings{b2ed70a9ae6f447eb264686d22149df0,

title = "Electrical properties and microstructures of ultraviolet transparent Ga2O3 thin films",

abstract = "The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O 3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500°C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga 2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.",

keywords = "Electrical resistivity, Gallium oxide (GaO), Microstructure, Partial oxygen pressure, Sputter deposition, Thin film, Transparent",

author = "Yasuhiro Shigetoshi and Susumu Tsukimoto and Hidehisa Takeda and Kazuhiro Ito and Masanori Murakami",

year = "2007",

month = jan,

day = "1",

doi = "10.4028/0-87849-462-6.1233",

language = "English",

isbn = "0878494626",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

number = "PART 2",

pages = "1233--1236",

booktitle = "Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6",

edition = "PART 2",

note = "6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6 ; Conference date: 05-11-2007 Through 09-11-2007",

}

TY - GEN

T1 - Electrical properties and microstructures of ultraviolet transparent Ga2O3 thin films

AU - Shigetoshi, Yasuhiro

AU - Tsukimoto, Susumu

AU - Takeda, Hidehisa

AU - Ito, Kazuhiro

AU - Murakami, Masanori

PY - 2007/1/1

Y1 - 2007/1/1

N2 - The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O 3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500°C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga 2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

AB - The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O 3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500°C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga 2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

KW - Electrical resistivity

KW - Gallium oxide (GaO)

KW - Microstructure

KW - Partial oxygen pressure

KW - Sputter deposition

KW - Thin film

KW - Transparent

UR - http://www.scopus.com/inward/record.url?scp=38349172728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38349172728&partnerID=8YFLogxK

U2 - 10.4028/0-87849-462-6.1233

DO - 10.4028/0-87849-462-6.1233

M3 - Conference contribution

AN - SCOPUS:38349172728

SN - 0878494626

SN - 9780878494620

T3 - Materials Science Forum

SP - 1233

EP - 1236

BT - Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6

PB - Trans Tech Publications Ltd

T2 - 6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6

Y2 - 5 November 2007 through 9 November 2007

ER -