TY - JOUR
T1 - Electrical properties and microstructure of low-temperature-crystallized lead zirconate titanate thin films prepared by 2.45 GHz microwave irradiation
AU - Wang, Zhan Jie
AU - Otsuka, Yuka
AU - Cao, Zhiping
AU - Kokawa, Hiroyuki
PY - 2009/12/1
Y1 - 2009/12/1
N2 - Lead zirconate titanate (PZT) thin films were coated on Pt/Ti/SiO 2/Si substrates by a sol-gel method and then crystallized at 490 °C using the magnetic field of 2.45 GHz microwave irradiation. The crystalline phases and microstructures as well as the electrical properties of the PZT thin films were investigated. X-ray diffraction analysis indicated that the films were crystallized well into the perovskite phase. Scanning electron microscopy showed that the PZT films had a typical rosette structure, which consisted of large round grains on a matrix of fine grains. A transmission electron microscopy (TEM) study revealed that the fine grains were also mainly crystallized into the perovskite phase. The average remanent polarization and coercive field of the PZT films were approximately 21 μC/cm2 and 92 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 510 and 0.07, respectively.
AB - Lead zirconate titanate (PZT) thin films were coated on Pt/Ti/SiO 2/Si substrates by a sol-gel method and then crystallized at 490 °C using the magnetic field of 2.45 GHz microwave irradiation. The crystalline phases and microstructures as well as the electrical properties of the PZT thin films were investigated. X-ray diffraction analysis indicated that the films were crystallized well into the perovskite phase. Scanning electron microscopy showed that the PZT films had a typical rosette structure, which consisted of large round grains on a matrix of fine grains. A transmission electron microscopy (TEM) study revealed that the fine grains were also mainly crystallized into the perovskite phase. The average remanent polarization and coercive field of the PZT films were approximately 21 μC/cm2 and 92 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 510 and 0.07, respectively.
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U2 - 10.1143/JJAP.48.09KA01
DO - 10.1143/JJAP.48.09KA01
M3 - Article
AN - SCOPUS:72149117536
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 Part 2
ER -