Electrical properties and microstructure of lead zirconate titanate thin film in situ grown by hybrid processing: Sol-gel method and pulsed laser deposition

Zhan Jie Wang, Hiroyuki Kokawa, Ryutaro Maeda, Masaaki Ichiki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Highly oriented Pb(ZrxTi1-x)O3 (PZT) thin films were in situ grown on Pt/Ti/SiO2/Si substrates by a hybrid process combining the sol-gel method and pulsed-laser deposition (PLD). Crystalline phases and preferred orientation of the PZT films were investigated by X-ray diffraction analysis. Surface morphology and microstructure were observed by scanning electron microscopy and transmission electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The preferred orientation of the films deposited by hybrid processing can be controlled using the layer deposited by the sol-gel method. The deposition temperature required to obtain the perovskite phase in hybrid processing is 460°C, and is significantly lower than that in the case of direct film deposition by PLD on a Pt/Ti/SiO 2/Si substrate. The dielectric constant and remanent polarization of the films in situ deposited at 460°C were approximately 900 and 15 μC/cm2, respectively.

Original languageEnglish
Pages (from-to)6554-6557
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number9 B
DOIs
Publication statusPublished - 2004 Sep 1

Keywords

  • Electrical properties
  • Hybrid processing
  • Lead zirconate titanate (PZT)
  • Microstructure
  • Pulsed laser deposition (PLD)
  • Sol-gel

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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