Abstract
Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared by pulsed-laser deposition (PLD) on Pt/Ti/SiO2/Si substrates and were crystallized by subsequent annealing at 750°C for 90min. Crystalline phases in the PZT films were investigated by X-ray diffraction (XRD) analysis. The microstructure and composition of the films were studied by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), respectively. It is found that the films consist almost entirely of the perovskite phase, but a thin layer of the pyrochlore phase exists at the surface of the films. Electrical properties of these films were evaluated by measuring P-E hysteresis loops and dielectric constants, and the effect of the microstructure on the electrical properties of the PZT thin films is discussed.
Original language | English |
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Pages (from-to) | 1529-1533 |
Number of pages | 5 |
Journal | Ceramics International |
Volume | 30 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2004 |
Externally published | Yes |
Event | 3rd Asian Meeting on Electroceramics - Singapore, Singapore Duration: 2003 Dec 7 → 2003 Dec 11 |
Keywords
- B. Electron microscopy
- Crystal structure
- D. PZT
- Ferroelectric materials
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry