Electrical properties and microstructure of lead zirconate titanate (PZT) thin films deposited by pulsed-laser deposition

Zhan Jie Wang; Hiroyuki Kokawa; Ryutaro Maeda

doi:10.1016/j.ceramint.2003.12.118

Electrical properties and microstructure of lead zirconate titanate (PZT) thin films deposited by pulsed-laser deposition

Zhan Jie Wang, Hiroyuki Kokawa, Ryutaro Maeda

ENG - Materials Processing

Research output: Contribution to journal › Conference article

9 Citations (Scopus)

Abstract

Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were prepared by pulsed-laser deposition (PLD) on Pt/Ti/SiO₂/Si substrates and were crystallized by subsequent annealing at 750°C for 90min. Crystalline phases in the PZT films were investigated by X-ray diffraction (XRD) analysis. The microstructure and composition of the films were studied by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), respectively. It is found that the films consist almost entirely of the perovskite phase, but a thin layer of the pyrochlore phase exists at the surface of the films. Electrical properties of these films were evaluated by measuring P-E hysteresis loops and dielectric constants, and the effect of the microstructure on the electrical properties of the PZT thin films is discussed.

Original language	English
Pages (from-to)	1529-1533
Number of pages	5
Journal	Ceramics International
Volume	30
Issue number	7
DOIs	https://doi.org/10.1016/j.ceramint.2003.12.118
Publication status	Published - 2004 Sep 7
Event	3rd Asian Meeting on Electroceramics - Singapore, Singapore Duration: 2003 Dec 7 → 2003 Dec 11

Keywords

B. Electron microscopy
Crystal structure
D. PZT
Ferroelectric materials

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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Wang, Z. J., Kokawa, H., & Maeda, R. (2004). Electrical properties and microstructure of lead zirconate titanate (PZT) thin films deposited by pulsed-laser deposition. Ceramics International, 30(7), 1529-1533. https://doi.org/10.1016/j.ceramint.2003.12.118

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title = "Electrical properties and microstructure of lead zirconate titanate (PZT) thin films deposited by pulsed-laser deposition",

abstract = "Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared by pulsed-laser deposition (PLD) on Pt/Ti/SiO2/Si substrates and were crystallized by subsequent annealing at 750°C for 90min. Crystalline phases in the PZT films were investigated by X-ray diffraction (XRD) analysis. The microstructure and composition of the films were studied by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), respectively. It is found that the films consist almost entirely of the perovskite phase, but a thin layer of the pyrochlore phase exists at the surface of the films. Electrical properties of these films were evaluated by measuring P-E hysteresis loops and dielectric constants, and the effect of the microstructure on the electrical properties of the PZT thin films is discussed.",

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T1 - Electrical properties and microstructure of lead zirconate titanate (PZT) thin films deposited by pulsed-laser deposition

AU - Wang, Zhan Jie

AU - Kokawa, Hiroyuki

AU - Maeda, Ryutaro

PY - 2004/9/7

Y1 - 2004/9/7

N2 - Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared by pulsed-laser deposition (PLD) on Pt/Ti/SiO2/Si substrates and were crystallized by subsequent annealing at 750°C for 90min. Crystalline phases in the PZT films were investigated by X-ray diffraction (XRD) analysis. The microstructure and composition of the films were studied by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), respectively. It is found that the films consist almost entirely of the perovskite phase, but a thin layer of the pyrochlore phase exists at the surface of the films. Electrical properties of these films were evaluated by measuring P-E hysteresis loops and dielectric constants, and the effect of the microstructure on the electrical properties of the PZT thin films is discussed.

AB - Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared by pulsed-laser deposition (PLD) on Pt/Ti/SiO2/Si substrates and were crystallized by subsequent annealing at 750°C for 90min. Crystalline phases in the PZT films were investigated by X-ray diffraction (XRD) analysis. The microstructure and composition of the films were studied by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), respectively. It is found that the films consist almost entirely of the perovskite phase, but a thin layer of the pyrochlore phase exists at the surface of the films. Electrical properties of these films were evaluated by measuring P-E hysteresis loops and dielectric constants, and the effect of the microstructure on the electrical properties of the PZT thin films is discussed.

KW - B. Electron microscopy

KW - Crystal structure

KW - D. PZT

KW - Ferroelectric materials

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JF - Ceramics International

SN - 0272-8842

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T2 - 3rd Asian Meeting on Electroceramics

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