Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating

Koya Motegi, Naofumi Ueno, Masao Sakuraba, Yoshihiro Osakabe, Hisanao Akima, Shigeo Sato

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In-situ B doping in epitaxial and amorphous Si films was investigated by low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD) by using SiH4 and B2H6 without substrate heating. For a B-doped epitaxial Si film, high carrier concentration of 7.1×1019 cm−3 with Hall mobility of 19 cm2 V−1 s−1 was measured at room temperature. Moreover, good rectifying characteristics was obtained for a Si p+/n junction diode. Especially for exploration of a heavily B-doped Si film, depth profiling results show that B concentration tends to be smaller near the initial substrate surface. Finally, effective control of B segregation by atomic-order B pre-deposition or by Si buffer deposition on initial Si(100) has been demonstrated to achieve heavy B doping in whole region of deposited Si film.

Original languageEnglish
Pages (from-to)50-54
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume70
DOIs
Publication statusPublished - 2017 Nov 1

Keywords

  • Depth profile
  • Epitaxial growth: silicon
  • In-situ boron doping
  • Plasma chemical vapor deposition
  • pn junction diode

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating'. Together they form a unique fingerprint.

Cite this