Electrical manipulation of spins in the Rashba two dimensional electron gas systems

Junsaku Nitta; Tobias Bergsten; Yoji Kunihashi; Makoto Kohda

doi:10.1063/1.3117232

Electrical manipulation of spins in the Rashba two dimensional electron gas systems

Junsaku Nitta, Tobias Bergsten, Yoji Kunihashi, Makoto Kohda

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We present our theoretical and experimental studies on manipulation of electron spins based on the Rashba spin-orbit interaction (SOI) in semiconductor heterostructures. Quantum well (QW) thickness dependence of the Rashba SOI strength α is investigated in InP/InGaAs/InAlAs asymmetric QWs by analyzing weak antilocalization. Two different QW thicknesses show inverse N_s dependence of α in the same heterostructures. This inverse N_s dependence of α is explained by the kp perturbation theory. We confirm that narrow wires are effective to suppress the spin relaxation. Spin interference effects due to spin precession are experimentally studied in small array of mesoscopic InGaAs rings. This is an experimental demonstration of a time reversal Aharonov-Casher effect, which shows that the spin precession angle in an InGaAs channel can be controlled by an electrostatic gate.

Original language	English
Article number	122402
Journal	Journal of Applied Physics
Volume	105
Issue number	12
DOIs	https://doi.org/10.1063/1.3117232
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{779df0a183b14aee93c5fe009e19be2d,

title = "Electrical manipulation of spins in the Rashba two dimensional electron gas systems",

abstract = "We present our theoretical and experimental studies on manipulation of electron spins based on the Rashba spin-orbit interaction (SOI) in semiconductor heterostructures. Quantum well (QW) thickness dependence of the Rashba SOI strength α is investigated in InP/InGaAs/InAlAs asymmetric QWs by analyzing weak antilocalization. Two different QW thicknesses show inverse Ns dependence of α in the same heterostructures. This inverse Ns dependence of α is explained by the kp perturbation theory. We confirm that narrow wires are effective to suppress the spin relaxation. Spin interference effects due to spin precession are experimentally studied in small array of mesoscopic InGaAs rings. This is an experimental demonstration of a time reversal Aharonov-Casher effect, which shows that the spin precession angle in an InGaAs channel can be controlled by an electrostatic gate.",

author = "Junsaku Nitta and Tobias Bergsten and Yoji Kunihashi and Makoto Kohda",

year = "2009",

doi = "10.1063/1.3117232",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Electrical manipulation of spins in the Rashba two dimensional electron gas systems

AU - Nitta, Junsaku

AU - Bergsten, Tobias

AU - Kunihashi, Yoji

AU - Kohda, Makoto

PY - 2009

Y1 - 2009

N2 - We present our theoretical and experimental studies on manipulation of electron spins based on the Rashba spin-orbit interaction (SOI) in semiconductor heterostructures. Quantum well (QW) thickness dependence of the Rashba SOI strength α is investigated in InP/InGaAs/InAlAs asymmetric QWs by analyzing weak antilocalization. Two different QW thicknesses show inverse Ns dependence of α in the same heterostructures. This inverse Ns dependence of α is explained by the kp perturbation theory. We confirm that narrow wires are effective to suppress the spin relaxation. Spin interference effects due to spin precession are experimentally studied in small array of mesoscopic InGaAs rings. This is an experimental demonstration of a time reversal Aharonov-Casher effect, which shows that the spin precession angle in an InGaAs channel can be controlled by an electrostatic gate.

AB - We present our theoretical and experimental studies on manipulation of electron spins based on the Rashba spin-orbit interaction (SOI) in semiconductor heterostructures. Quantum well (QW) thickness dependence of the Rashba SOI strength α is investigated in InP/InGaAs/InAlAs asymmetric QWs by analyzing weak antilocalization. Two different QW thicknesses show inverse Ns dependence of α in the same heterostructures. This inverse Ns dependence of α is explained by the kp perturbation theory. We confirm that narrow wires are effective to suppress the spin relaxation. Spin interference effects due to spin precession are experimentally studied in small array of mesoscopic InGaAs rings. This is an experimental demonstration of a time reversal Aharonov-Casher effect, which shows that the spin precession angle in an InGaAs channel can be controlled by an electrostatic gate.

UR - http://www.scopus.com/inward/record.url?scp=67650261029&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650261029&partnerID=8YFLogxK

U2 - 10.1063/1.3117232

DO - 10.1063/1.3117232

M3 - Article

AN - SCOPUS:67650261029

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 122402

ER -

Electrical manipulation of spins in the Rashba two dimensional electron gas systems

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