TY - GEN
T1 - Electrical manipulation of magnetization switching in Co2FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization
AU - Wen, Z.
AU - Sukegawa, H.
AU - Kasai, S.
AU - Inomata, K.
AU - Mitani, S.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Electrical manipulation of magnetization switching, such as spin-transfer torque (STT) switching, electric-field-assistant magnetization switching, and spin-orbit torque (SOT) switching, has been attracting great attentions due to its applications in low-power-consumption spintronic devices, such as magnetoresistive random access memories (MRAMs) and non-volatile magnetic-logic circuits. Recent investigations of electrical manipulation of magnetization switching in magnetic tunnel junctions (MTJs) have mainly been carried out in CoFeB/MgO/CoFeB structures. However, the switching current density of those MTJs is still too high for the scaling of gigabit MRAMs. Therefore, the establishment of new ferromagnetic materials for MTJs is greatly desired.
AB - Electrical manipulation of magnetization switching, such as spin-transfer torque (STT) switching, electric-field-assistant magnetization switching, and spin-orbit torque (SOT) switching, has been attracting great attentions due to its applications in low-power-consumption spintronic devices, such as magnetoresistive random access memories (MRAMs) and non-volatile magnetic-logic circuits. Recent investigations of electrical manipulation of magnetization switching in magnetic tunnel junctions (MTJs) have mainly been carried out in CoFeB/MgO/CoFeB structures. However, the switching current density of those MTJs is still too high for the scaling of gigabit MRAMs. Therefore, the establishment of new ferromagnetic materials for MTJs is greatly desired.
UR - http://www.scopus.com/inward/record.url?scp=84942446735&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84942446735&partnerID=8YFLogxK
U2 - 10.1109/INTMAG.2015.7157500
DO - 10.1109/INTMAG.2015.7157500
M3 - Conference contribution
AN - SCOPUS:84942446735
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -