Electrical manipulation of magnetization switching in Co2FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization

Z. Wen; H. Sukegawa; S. Kasai; K. Inomata; S. Mitani

doi:10.1109/INTMAG.2015.7157500

Electrical manipulation of magnetization switching in Co₂FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization

Z. Wen, H. Sukegawa, S. Kasai, K. Inomata, S. Mitani

Center for Spintronics Research Network (CSRN)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electrical manipulation of magnetization switching, such as spin-transfer torque (STT) switching, electric-field-assistant magnetization switching, and spin-orbit torque (SOT) switching, has been attracting great attentions due to its applications in low-power-consumption spintronic devices, such as magnetoresistive random access memories (MRAMs) and non-volatile magnetic-logic circuits. Recent investigations of electrical manipulation of magnetization switching in magnetic tunnel junctions (MTJs) have mainly been carried out in CoFeB/MgO/CoFeB structures. However, the switching current density of those MTJs is still too high for the scaling of gigabit MRAMs. Therefore, the establishment of new ferromagnetic materials for MTJs is greatly desired.

Original language	English
Title of host publication	2015 IEEE International Magnetics Conference, INTERMAG 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479973224
DOIs	https://doi.org/10.1109/INTMAG.2015.7157500
Publication status	Published - 2015 Jul 14
Event	2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China Duration: 2015 May 11 → 2015 May 15

Publication series

Name	2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other	2015 IEEE International Magnetics Conference, INTERMAG 2015
Country	China
City	Beijing
Period	15/5/11 → 15/5/15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

Access to Document

10.1109/INTMAG.2015.7157500

Fingerprint Dive into the research topics of 'Electrical manipulation of magnetization switching in Co<sub>2</sub>FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization'. Together they form a unique fingerprint.

Cite this

Wen, Z., Sukegawa, H., Kasai, S., Inomata, K., & Mitani, S. (2015). Electrical manipulation of magnetization switching in Co₂FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7157500] (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7157500

Electrical manipulation of magnetization switching in Co₂FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization. / Wen, Z.; Sukegawa, H.; Kasai, S.; Inomata, K.; Mitani, S.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7157500 (2015 IEEE International Magnetics Conference, INTERMAG 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wen, Z, Sukegawa, H, Kasai, S, Inomata, K & Mitani, S 2015, Electrical manipulation of magnetization switching in Co₂FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7157500, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 15/5/11. https://doi.org/10.1109/INTMAG.2015.7157500

Wen Z, Sukegawa H, Kasai S, Inomata K, Mitani S. Electrical manipulation of magnetization switching in Co₂FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization. In 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7157500. (2015 IEEE International Magnetics Conference, INTERMAG 2015). https://doi.org/10.1109/INTMAG.2015.7157500

Wen, Z. ; Sukegawa, H. ; Kasai, S. ; Inomata, K. ; Mitani, S. / Electrical manipulation of magnetization switching in Co₂FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization. 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE International Magnetics Conference, INTERMAG 2015).

@inproceedings{48b0dcbe2e1e4dd68470082c55e6911c,

title = "Electrical manipulation of magnetization switching in Co2FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization",

abstract = "Electrical manipulation of magnetization switching, such as spin-transfer torque (STT) switching, electric-field-assistant magnetization switching, and spin-orbit torque (SOT) switching, has been attracting great attentions due to its applications in low-power-consumption spintronic devices, such as magnetoresistive random access memories (MRAMs) and non-volatile magnetic-logic circuits. Recent investigations of electrical manipulation of magnetization switching in magnetic tunnel junctions (MTJs) have mainly been carried out in CoFeB/MgO/CoFeB structures. However, the switching current density of those MTJs is still too high for the scaling of gigabit MRAMs. Therefore, the establishment of new ferromagnetic materials for MTJs is greatly desired.",

author = "Z. Wen and H. Sukegawa and S. Kasai and K. Inomata and S. Mitani",

year = "2015",

month = jul,

day = "14",

doi = "10.1109/INTMAG.2015.7157500",

language = "English",

series = "2015 IEEE International Magnetics Conference, INTERMAG 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE International Magnetics Conference, INTERMAG 2015",

note = "2015 IEEE International Magnetics Conference, INTERMAG 2015 ; Conference date: 11-05-2015 Through 15-05-2015",

}

TY - GEN

T1 - Electrical manipulation of magnetization switching in Co2FeAl alloy based magnetic tunnel junctions with in-plane and perpendicular magnetization

AU - Wen, Z.

AU - Sukegawa, H.

AU - Kasai, S.

AU - Inomata, K.

AU - Mitani, S.

PY - 2015/7/14

Y1 - 2015/7/14

N2 - Electrical manipulation of magnetization switching, such as spin-transfer torque (STT) switching, electric-field-assistant magnetization switching, and spin-orbit torque (SOT) switching, has been attracting great attentions due to its applications in low-power-consumption spintronic devices, such as magnetoresistive random access memories (MRAMs) and non-volatile magnetic-logic circuits. Recent investigations of electrical manipulation of magnetization switching in magnetic tunnel junctions (MTJs) have mainly been carried out in CoFeB/MgO/CoFeB structures. However, the switching current density of those MTJs is still too high for the scaling of gigabit MRAMs. Therefore, the establishment of new ferromagnetic materials for MTJs is greatly desired.

AB - Electrical manipulation of magnetization switching, such as spin-transfer torque (STT) switching, electric-field-assistant magnetization switching, and spin-orbit torque (SOT) switching, has been attracting great attentions due to its applications in low-power-consumption spintronic devices, such as magnetoresistive random access memories (MRAMs) and non-volatile magnetic-logic circuits. Recent investigations of electrical manipulation of magnetization switching in magnetic tunnel junctions (MTJs) have mainly been carried out in CoFeB/MgO/CoFeB structures. However, the switching current density of those MTJs is still too high for the scaling of gigabit MRAMs. Therefore, the establishment of new ferromagnetic materials for MTJs is greatly desired.

UR - http://www.scopus.com/inward/record.url?scp=84942446735&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942446735&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.2015.7157500

DO - 10.1109/INTMAG.2015.7157500

M3 - Conference contribution

AN - SCOPUS:84942446735

T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015

BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015

Y2 - 11 May 2015 through 15 May 2015

ER -