TY - GEN
T1 - Electrical magnetization reversal in ferromagnetic semiconductors
AU - Matsukura, F.
AU - Chiba, D.
AU - Yamanouchi, Michihiko
AU - Ohno, H.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - III-V magnetic semiconductors, (Ga,Mn)As and (In,Mn)As, exhibit carrier-induced ferromagnetism and their magnetic properties are explained well by a mean-filed model [1]. They are among the promising materials for semiconductor spintronics because of novel spin-related phenomena in devices based on them, e.g. large tunneling magnetoresistance in a (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic junction [2], a circular-polarized light-emission in a diode with a (Ga,Mn)As emitter [3], and isothermal magnetic phase transition in a field-effect transistor (FET) with an (In,Mn)As cannel [4]. Here, we show our recent studies on the electrical manipulation of the magnetization reversal in ferromagnetic semiconductor structures; (i) electric-field assisted magnetization reversal of (In,Mn)As in an FET structure, where the magnetic coercivity is modulated by external electric field thorough the change of carrier concentration [5], (ii) current-driven magnetization reversal of a patterned area of (Ga,Mn)As by magnetic domain wall propagation [6], and (iii) current-driven magnetization reversal of a (Ga,Mn)As electrode in a magnetic tunnel junction [7].
AB - III-V magnetic semiconductors, (Ga,Mn)As and (In,Mn)As, exhibit carrier-induced ferromagnetism and their magnetic properties are explained well by a mean-filed model [1]. They are among the promising materials for semiconductor spintronics because of novel spin-related phenomena in devices based on them, e.g. large tunneling magnetoresistance in a (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic junction [2], a circular-polarized light-emission in a diode with a (Ga,Mn)As emitter [3], and isothermal magnetic phase transition in a field-effect transistor (FET) with an (In,Mn)As cannel [4]. Here, we show our recent studies on the electrical manipulation of the magnetization reversal in ferromagnetic semiconductor structures; (i) electric-field assisted magnetization reversal of (In,Mn)As in an FET structure, where the magnetic coercivity is modulated by external electric field thorough the change of carrier concentration [5], (ii) current-driven magnetization reversal of a patterned area of (Ga,Mn)As by magnetic domain wall propagation [6], and (iii) current-driven magnetization reversal of a (Ga,Mn)As electrode in a magnetic tunnel junction [7].
UR - http://www.scopus.com/inward/record.url?scp=16244362364&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=16244362364&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:16244362364
SN - 0769521894
SN - 9780769521893
T3 - Proceedings - 2004 International Conference on MEMS, NANO and Smart Systems, ICMENS 2004
BT - Proceedings - 2004 International Conference on MEMS, NANO and Smart Systems, ICMENS 2004
A2 - Badawy, W.
A2 - Moussa, W.
T2 - Proceedings - 2004 International Conference on MEMS, NANO and Smart Systems, ICMENS 2004
Y2 - 25 August 2004 through 27 August 2004
ER -