Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles

Shuji Tanaka; Mamoru Mohri; Toshinori Ogashiwa; Hideyuki Fukushi; Katsunao Tanaka; Daisuke Nakamura; Takashi Nishimori; Masayoshi Esashi

doi:10.1016/j.sna.2012.01.003

Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles

Shuji Tanaka, Mamoru Mohri, Toshinori Ogashiwa, Hideyuki Fukushi, Katsunao Tanaka, Daisuke Nakamura, Takashi Nishimori, Masayoshi Esashi

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

An anodically bondable low temperature cofired ceramic (LTCC) wafer offers a versatile, clean and reliable wafer-level hermetic packaging for MEMS. This paper reports electrical interconnection in parallel with anodic bonding between MEMS on a Si wafer and vias in the LTCC wafer using porous Au bump. The Au bump is made of submicron Au particles, and so compliant as it easily absorbs large height difference. The LTCC wafer with the Au bumps and an SOI wafer with Au/Pt/Cr pads and diaphragms were anodically bonded. 100% yield of both electrical interconnection and hermetic sealing was demonstrated. Heat cycle test confirmed the reliability of both electrical interconnection and hermeticity. In addition, the transfer of the porous Au bumps from a mother glass wafer to a target LTCC wafer was demonstrated.

Original language	English
Pages (from-to)	198-202
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	188
DOIs	https://doi.org/10.1016/j.sna.2012.01.003
Publication status	Published - 2012 Dec
Externally published	Yes

Keywords

Anodic bonding
Au Bump
LTCC wafer
Packaging

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2012.01.003

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Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles. / Tanaka, Shuji; Mohri, Mamoru; Ogashiwa, Toshinori; Fukushi, Hideyuki; Tanaka, Katsunao; Nakamura, Daisuke; Nishimori, Takashi; Esashi, Masayoshi.

In: Sensors and Actuators, A: Physical, Vol. 188, 12.2012, p. 198-202.

Research output: Contribution to journal › Article › peer-review

Tanaka, Shuji ; Mohri, Mamoru ; Ogashiwa, Toshinori ; Fukushi, Hideyuki ; Tanaka, Katsunao ; Nakamura, Daisuke ; Nishimori, Takashi ; Esashi, Masayoshi. / Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles. In: Sensors and Actuators, A: Physical. 2012 ; Vol. 188. pp. 198-202.

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title = "Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles",

abstract = "An anodically bondable low temperature cofired ceramic (LTCC) wafer offers a versatile, clean and reliable wafer-level hermetic packaging for MEMS. This paper reports electrical interconnection in parallel with anodic bonding between MEMS on a Si wafer and vias in the LTCC wafer using porous Au bump. The Au bump is made of submicron Au particles, and so compliant as it easily absorbs large height difference. The LTCC wafer with the Au bumps and an SOI wafer with Au/Pt/Cr pads and diaphragms were anodically bonded. 100% yield of both electrical interconnection and hermetic sealing was demonstrated. Heat cycle test confirmed the reliability of both electrical interconnection and hermeticity. In addition, the transfer of the porous Au bumps from a mother glass wafer to a target LTCC wafer was demonstrated.",

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Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles

Abstract

Keywords

ASJC Scopus subject areas

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