Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles

Shuji Tanaka, Mamoru Mohri, Toshinori Ogashiwa, Hideyuki Fukushi, Katsunao Tanaka, Daisuke Nakamura, Takashi Nishimori, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

An anodically bondable low temperature cofired ceramic (LTCC) wafer offers a versatile, clean and reliable wafer-level hermetic packaging for MEMS. This paper reports electrical interconnection in parallel with anodic bonding between MEMS on a Si wafer and vias in the LTCC wafer using porous Au bump. The Au bump is made of submicron Au particles, and so compliant as it easily absorbs large height difference. The LTCC wafer with the Au bumps and an SOI wafer with Au/Pt/Cr pads and diaphragms were anodically bonded. 100% yield of both electrical interconnection and hermetic sealing was demonstrated. Heat cycle test confirmed the reliability of both electrical interconnection and hermeticity. In addition, the transfer of the porous Au bumps from a mother glass wafer to a target LTCC wafer was demonstrated.

Original languageEnglish
Pages (from-to)198-202
Number of pages5
JournalSensors and Actuators, A: Physical
Volume188
DOIs
Publication statusPublished - 2012 Dec

Keywords

  • Anodic bonding
  • Au Bump
  • LTCC wafer
  • Packaging

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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