Electrical injection of spin polarized electrons into GaAs

Georg Schmidt, Laurens W. Molenkamp, Gerrit W. Bauer

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Electrical spin injection into semiconductors has been a challenge during the last years. Although many attempts have been made to realize spin injection from a ferromagnetic metal into a semiconductor two-dimensional electron gas (2DEG), all effects published up to now were small and could easily be explained by stray Hall effects or magnetoresistance. We have developed a theoretical model, which explains these negative results by the mismatch in conductivities and spin scattering in metallic ferromagnets and semiconductors. At the same time, the model indicates the direction towards more promising devices using highly spin polarized II-VI-magnetic semiconductors as a spin aligner. We have demonstrated highly efficient spin injection into a GaAs/ AlGaAs light emitting diode. The spin polarization was detected via the optical polarization of the emitted light.

Original languageEnglish
Pages (from-to)83-88
Number of pages6
JournalMaterials Science and Engineering C
Volume15
Issue number1-2
DOIs
Publication statusPublished - 2001 Sep 19
Externally publishedYes

Keywords

  • Hybrid structures
  • Spin injection
  • Spintronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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