Electrical electron spin injection with a p+-(Ga,Mn)As/n +-GaAs tunnel junction

M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We demonstrate electrical electron spin injection in a p +-(Ga,Mn)As/n+-GaAs tunnel junction with an n-GaAs/(In,Ga)As/p-GaAs light emitting diode (LED). By applying a reverse bias to the p+-(Ga,Mn)As/n+-GaAs junction (forward bias to the LED), we observed clear hysteresis in electroluminescence (EL) polarization. The magnitude of the EL polarization, which does not depend critically on the spacer layer thickness up to 800 nm, is found to be about five times greater than that of the hole spin injection.

Original languageEnglish
Pages (from-to)167-170
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume16
Issue number1
Publication statusPublished - 2003

Keywords

  • (Ga,Mn)As
  • Esaki diode
  • Ferromagnetic semiconductor
  • Light emitting diode
  • Spin injection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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