Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

Shin Ichi Amma, Yuki Tokumoto, Keiichi Edagawa, Naoya Shibata, Teruyasu Mizoguchi, Takahisa Yamamoto, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)

    Abstract

    Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

    Original languageEnglish
    Article number193109
    JournalApplied Physics Letters
    Volume96
    Issue number19
    DOIs
    Publication statusPublished - 2010

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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