Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200

Y. Nishitani, D. Chiba, F. Matsukura, H. Ohno

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5 Citations (Scopus)

Abstract

The authors have fabricated field-effect transistor structures with a ferromagnetic Ga1-x Mnx As channel having Mn composition of x=0.027-0.200. The samples with larger x have higher Curie temperature TC and hole concentration p, while the controllable range of TC by applying external electric field does not increase with x. x dependence of effective Mn composition is also described.

Original languageEnglish
Article number07D139
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008 Apr 21

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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