Electrical control of spin coherence in ZnO

S. Ghosh, D. W. Steuerman, B. Maertz, K. Ohtani, Huaizhe Xu, H. Ohno, D. D. Awschalom

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22 Citations (Scopus)

Abstract

Electric field enhanced electron spin coherence is characterized using time-resolved Faraday rotation spectroscopy in n -type ZnO epilayers grown by molecular beam epitaxy. An in-plane dc electric field E almost doubles the transverse spin lifetime at 20 K without affecting the effective g factor. This effect persists until high temperatures, but decreases with increasing carrier concentration. Comparisons of the variations in the spin lifetime, the carrier recombination lifetime, and photoluminescence lifetimes indicate that the applied E enhances the radiative recombination rate. All observed effects are independent of crystal directionality and are performed at low magnetic fields (B<0.2 T).

Original languageEnglish
Article number162109
JournalApplied Physics Letters
Volume92
Issue number16
DOIs
Publication statusPublished - 2008 May 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ghosh, S., Steuerman, D. W., Maertz, B., Ohtani, K., Xu, H., Ohno, H., & Awschalom, D. D. (2008). Electrical control of spin coherence in ZnO. Applied Physics Letters, 92(16), [162109]. https://doi.org/10.1063/1.2913049