The sidewall current in SiO2 contact holes was measured by the method of on-wafer monitoring. Depending on the structure of the deposited fluorocarbon polymer, the sidewall current changed markedly. The fluorocarbon film deposited during the etching processes affected the charge accumulation in high-aspect-ratio contact holes. It was found that the highly cross-linked fluorocarbon film with many -C=C- bonds induces high sidewall current compared to the high-fluorine content polymer films.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2002 Nov|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering