Electrical conductivity of sidewall-deposited fluorocarbon polymer in SiO2 etching processes

T. Shimmura, S. Soda, S. Samukawa, M. Koyanagi, K. Hane

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The sidewall current in SiO2 contact holes was measured by the method of on-wafer monitoring. Depending on the structure of the deposited fluorocarbon polymer, the sidewall current changed markedly. The fluorocarbon film deposited during the etching processes affected the charge accumulation in high-aspect-ratio contact holes. It was found that the highly cross-linked fluorocarbon film with many -C=C- bonds induces high sidewall current compared to the high-fluorine content polymer films.

Original languageEnglish
Pages (from-to)2346-2350
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 2002 Nov

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Electrical conductivity of sidewall-deposited fluorocarbon polymer in SiO<sub>2</sub> etching processes'. Together they form a unique fingerprint.

Cite this