Electrical conductivity of sidewall-deposited fluorocarbon polymer in SiO2 etching processes

T. Shimmura; S. Soda; S. Samukawa; M. Koyanagi; K. Hane

doi:10.1116/1.1520551

Electrical conductivity of sidewall-deposited fluorocarbon polymer in SiO₂ etching processes

T. Shimmura, S. Soda, S. Samukawa, M. Koyanagi, K. Hane

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The sidewall current in SiO₂ contact holes was measured by the method of on-wafer monitoring. Depending on the structure of the deposited fluorocarbon polymer, the sidewall current changed markedly. The fluorocarbon film deposited during the etching processes affected the charge accumulation in high-aspect-ratio contact holes. It was found that the highly cross-linked fluorocarbon film with many -C=C- bonds induces high sidewall current compared to the high-fluorine content polymer films.

Original language	English
Pages (from-to)	2346-2350
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1520551
Publication status	Published - 2002 Nov

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The sidewall current in SiO2 contact holes was measured by the method of on-wafer monitoring. Depending on the structure of the deposited fluorocarbon polymer, the sidewall current changed markedly. The fluorocarbon film deposited during the etching processes affected the charge accumulation in high-aspect-ratio contact holes. It was found that the highly cross-linked fluorocarbon film with many -C=C- bonds induces high sidewall current compared to the high-fluorine content polymer films.",

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AU - Soda, S.

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AU - Koyanagi, M.

AU - Hane, K.

PY - 2002/11

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N2 - The sidewall current in SiO2 contact holes was measured by the method of on-wafer monitoring. Depending on the structure of the deposited fluorocarbon polymer, the sidewall current changed markedly. The fluorocarbon film deposited during the etching processes affected the charge accumulation in high-aspect-ratio contact holes. It was found that the highly cross-linked fluorocarbon film with many -C=C- bonds induces high sidewall current compared to the high-fluorine content polymer films.

AB - The sidewall current in SiO2 contact holes was measured by the method of on-wafer monitoring. Depending on the structure of the deposited fluorocarbon polymer, the sidewall current changed markedly. The fluorocarbon film deposited during the etching processes affected the charge accumulation in high-aspect-ratio contact holes. It was found that the highly cross-linked fluorocarbon film with many -C=C- bonds induces high sidewall current compared to the high-fluorine content polymer films.

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Electrical conductivity of sidewall-deposited fluorocarbon polymer in SiO₂ etching processes

Abstract

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