Electrical conductivity of C-SiC and Si-SiC prepared by spark plasma sintering

Y. Taki, Mettaya Kitiwan, Hirokazu Katsui, Takashi Goto

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

SiC bodies with an excess of C or Si (C-SiC and Si-SiC, respectively) were prepared by spark plasma sintering at 2023-2373 K, and their electrical properties were studied. The relative densities of the SiC bodies sintered at 2373 K were 74-87%, while their electrical conductivities increased with an increase in the excess amount of C and Si. Pristine, C-SiC, and Si-SiC bodies exhibited n-type conduction, and their Seebeck coefficients showed the highest value in the range -250 to -300 μV·K-1, at 673-773 K.

Original languageEnglish
Pages (from-to)11441-11444
Number of pages4
JournalMaterials Today: Proceedings
Volume4
Issue number11
DOIs
Publication statusPublished - 2017 Jan 1

Keywords

  • electrical conductivity
  • seebeck coefficient
  • silicon carbide
  • spark plasma sintering

ASJC Scopus subject areas

  • Materials Science(all)

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