Electrical conductivity of BaTi4O9 film prepared by laser chemical vapor deposition method

Dongyun Guo, Takashi Goto, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A BaTi 4O 9 film was prepared on a Pt/Ti/SiO 2/Si substrate by a laser chemical vapor deposition method and was investigated by impedance spectroscopy over ranges of temperature (300-1073 K) and frequency (10 2-10 7 Hz). Plots between real and imaginary parts of the impedance (Z′ and Z′′) suggest the presence of two relaxation regimes, which were attributed to grain and grain boundary responses. The conduction of both grains and grain boundaries obeys the Arrhenius format with activation energies of respectively 1.45 and 1.24 eV. The close activation energies indicate that the conduction in BaTi 4O 9 film is mainly by oxygen vacancies.

Original languageEnglish
Pages (from-to)739-742
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume107
Issue number3
DOIs
Publication statusPublished - 2012 Jun 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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