A BaTi 4O 9 film was prepared on a Pt/Ti/SiO 2/Si substrate by a laser chemical vapor deposition method and was investigated by impedance spectroscopy over ranges of temperature (300-1073 K) and frequency (10 2-10 7 Hz). Plots between real and imaginary parts of the impedance (Z′ and Z′′) suggest the presence of two relaxation regimes, which were attributed to grain and grain boundary responses. The conduction of both grains and grain boundaries obeys the Arrhenius format with activation energies of respectively 1.45 and 1.24 eV. The close activation energies indicate that the conduction in BaTi 4O 9 film is mainly by oxygen vacancies.
|Number of pages||4|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2012 Jun 1|
ASJC Scopus subject areas
- Materials Science(all)