TY - JOUR
T1 - Electrical conductivity measurements of β-boron under high pressure and temperature
AU - Zhang, Dongmei
AU - Gao, Chunxiao
AU - Ma, Yanzhang
AU - He, Chunyuan
AU - Huang, Xiaowei
AU - Hao, Aimin
AU - Yu, Cuiling
AU - Li, Yanchun
AU - Liu, Jing
AU - Peng, Gang
AU - Li, Dongmei
AU - Liu, Hongwu
AU - Zou, Guangtian
PY - 2007/10/24
Y1 - 2007/10/24
N2 - Using a microcircuit fabricated on a diamond anvil cell, we carried out insitu conductivity measurements on β-boron at pressures up to 28GPa. The electrical conductivity of the sample increases with increasing pressure, but it does not return to original state when the pressure returns to ambient. As the conductivity gradually increases within a temperature region from 293 to 473K, two significant different conduction processes are observed. A possible reason for this result is proposed based on the valence band structure. In addition, by laser heating, our experimental result indicates that β-boron still shows the transport behavior of a semiconductor.
AB - Using a microcircuit fabricated on a diamond anvil cell, we carried out insitu conductivity measurements on β-boron at pressures up to 28GPa. The electrical conductivity of the sample increases with increasing pressure, but it does not return to original state when the pressure returns to ambient. As the conductivity gradually increases within a temperature region from 293 to 473K, two significant different conduction processes are observed. A possible reason for this result is proposed based on the valence band structure. In addition, by laser heating, our experimental result indicates that β-boron still shows the transport behavior of a semiconductor.
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U2 - 10.1088/0953-8984/19/42/425216
DO - 10.1088/0953-8984/19/42/425216
M3 - Article
AN - SCOPUS:34648840560
VL - 19
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 42
M1 - 425216
ER -