Electrical conduction property at InAs/Si(111) interface by selective-area MOVPE

S. Watanabe, K. Watanabe, Akio Higo, M. Sugiyama, Y. Nakano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Ohmic I-V characteristics at interface between n-type InAs and n-type Si have been obtained. Single-domain InAs islands (1μm in diameter and 0.5 μm in height) have been grown epitaxially on Si(111) by selective-area MOVPE. After annealing, linear I-V characteristic was observed with excellent reproducibility and the current through the electrode depends on the number of InAs islands beneath the surface contact metal. The resistivity of InAs was estimated to be 0.0662 · cm. The value corresponds to a carrier concentration of approximately. 2 × 1016 cm-3. This is reasonable as the intrinsic carrier concentration for an un-doped InAs layer.

    Original languageEnglish
    Title of host publication2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
    Pages133-136
    Number of pages4
    DOIs
    Publication statusPublished - 2012 Dec 1
    Event2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 - Santa Barbara, CA, United States
    Duration: 2012 Aug 272012 Aug 30

    Publication series

    NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
    ISSN (Print)1092-8669

    Other

    Other2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
    CountryUnited States
    CitySanta Barbara, CA
    Period12/8/2712/8/30

    Keywords

    • CCD image sensors
    • Indium compounds
    • epitaxial layers
    • infrared detectors
    • silicon
    • tunneling

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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