Electrical conduction along dislocations in plastically deformed GaN

Y. Kamimura, T. Yokoyama, H. Oiwa, K. Edagawa, I. Yonenaga

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

Electrical conduction along dislocations in plastically deformed n-GaN single crystals has been investigated by scanning spread resistance microscopy (SSRM). In the SSRM images, many conductive spots have been observed, which correspond to electrical conduction along the dislocations introduced by deformation. Here, the introduced dislocations are b=(a/3)<12̄10> edge dislocations parallel to the [0001] direction. The current values at the spots normalized to the background current value are larger than 100. Previous works have shown that grown-in edge dislocations in GaN are nonconductive. The high conductivity of the deformation-introduced edge dislocations in the present work suggests that the conductivity depends sensitively on the dislocation core structure.

Original languageEnglish
Article number012010
JournalIOP Conference Series: Materials Science and Engineering
Volume3
DOIs
Publication statusPublished - 2009
Event3rd International Conference on the Fundamentals of Plastic Deformation, DISLOCATIONS 2008 - Hong Kong, Hong Kong
Duration: 2008 Oct 132008 Oct 17

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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