We measured inelastic electron tunneling (IET) spectra and conductance for MgO tunneling magnetoresistance (TMR) films to obtain information on the ferromagnetic/barrier layer interface. The IET spectra showed the difference between amorphous and crystalline structures in the barrier. In the magnetic tunnel junction (MTJ) with a crystalline barrier the IET spectra indicated an Mg-O phonon peak at a low bias voltage by measurement with a parallel magnetization configuration. On the other hand, no peak was observed in the MTJ with an amorphous barrier.
- IET spectroscopy
- Magnetic tunneling junction (MTJ)
- MgO barrier
- Tunneling magnetoresistance (TMR)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics