Electrical conductance properties for magnetic tunnel junctions with MgO barriers

K. Tamanoi, M. Sato, M. Oogane, Y. Ando, T. Tanaka, Y. Uehara, T. Uzumaki

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We measured inelastic electron tunneling (IET) spectra and conductance for MgO tunneling magnetoresistance (TMR) films to obtain information on the ferromagnetic/barrier layer interface. The IET spectra showed the difference between amorphous and crystalline structures in the barrier. In the magnetic tunnel junction (MTJ) with a crystalline barrier the IET spectra indicated an Mg-O phonon peak at a low bias voltage by measurement with a parallel magnetization configuration. On the other hand, no peak was observed in the MTJ with an amorphous barrier.

Original languageEnglish
Pages (from-to)2959-2962
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume320
Issue number22
DOIs
Publication statusPublished - 2008 Nov 1

Keywords

  • IET spectroscopy
  • Magnetic tunneling junction (MTJ)
  • MgO barrier
  • Tunneling magnetoresistance (TMR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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