Electrical characterization of W/HfO2 MOSFETs with La 2O3 incorporation

Hiroki Fujisawa; A. Srivastava; Kuniyuki Kakushima; Parhat Ahmet; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; C. K. Sarkar; Hiroshi Iwai

doi:10.1149/1.3096424

Electrical characterization of W/HfO₂ MOSFETs with La ₂O₃ incorporation

Hiroki Fujisawa, A. Srivastava, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, C. K. Sarkar, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Electrical characterization of HfO₂ MOSFETs with La ₂O₃ incorporation has been conducted. A shift in threshold voltage to negative direction has been observed with La₂O ₃ incorporation. Moreover, g_m and subthreshold slope have been improved with La₂O₃. 1/f noise measurement has revealed that HfO₂ gated MOSFET incorporating La₂O ₃ layer reduces the noise level .

Original language	English
Title of host publication	ECS Transactions - ISTC/CSTIC 2009 (CISTC)
Pages	39-42
Number of pages	4
Edition	1 PART 1
DOIs	https://doi.org/10.1149/1.3096424
Publication status	Published - 2009
Externally published	Yes
Event	ISTC/CSTIC 2009 (CISTC) - Shanghai, China Duration: 2009 Mar 19 → 2009 Mar 20

Publication series

Name	ECS Transactions
Number	1 PART 1
Volume	18
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	ISTC/CSTIC 2009 (CISTC)
Country	China
City	Shanghai
Period	09/3/19 → 09/3/20

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3096424

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Electrical characterization of W/HfO₂ MOSFETs with La ₂O₃ incorporation. / Fujisawa, Hiroki; Srivastava, A.; Kakushima, Kuniyuki; Ahmet, Parhat; Tsutsui, Kazuo; Sugii, Nobuyuki; Hattori, Takeo; Sarkar, C. K.; Iwai, Hiroshi.

ECS Transactions - ISTC/CSTIC 2009 (CISTC). 1 PART 1. ed. 2009. p. 39-42 (ECS Transactions; Vol. 18, No. 1 PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujisawa, H, Srivastava, A, Kakushima, K, Ahmet, P, Tsutsui, K, Sugii, N, Hattori, T, Sarkar, CK & Iwai, H 2009, Electrical characterization of W/HfO₂ MOSFETs with La ₂O₃ incorporation. in ECS Transactions - ISTC/CSTIC 2009 (CISTC). 1 PART 1 edn, ECS Transactions, no. 1 PART 1, vol. 18, pp. 39-42, ISTC/CSTIC 2009 (CISTC), Shanghai, China, 09/3/19. https://doi.org/10.1149/1.3096424

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abstract = "Electrical characterization of HfO2 MOSFETs with La 2O3 incorporation has been conducted. A shift in threshold voltage to negative direction has been observed with La2O 3 incorporation. Moreover, gm and subthreshold slope have been improved with La2O3. 1/f noise measurement has revealed that HfO2 gated MOSFET incorporating La2O 3 layer reduces the noise level .",

author = "Hiroki Fujisawa and A. Srivastava and Kuniyuki Kakushima and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Sarkar, {C. K.} and Hiroshi Iwai",

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AU - Srivastava, A.

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AU - Ahmet, Parhat

AU - Tsutsui, Kazuo

AU - Sugii, Nobuyuki

AU - Hattori, Takeo

AU - Sarkar, C. K.

AU - Iwai, Hiroshi

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AB - Electrical characterization of HfO2 MOSFETs with La 2O3 incorporation has been conducted. A shift in threshold voltage to negative direction has been observed with La2O 3 incorporation. Moreover, gm and subthreshold slope have been improved with La2O3. 1/f noise measurement has revealed that HfO2 gated MOSFET incorporating La2O 3 layer reduces the noise level .

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