@inproceedings{e6316cf4a06745d798f0a902c496c78e,
title = "Electrical characterization of W/HfO2 MOSFETs with La 2O3 incorporation",
abstract = "Electrical characterization of HfO2 MOSFETs with La 2O3 incorporation has been conducted. A shift in threshold voltage to negative direction has been observed with La2O 3 incorporation. Moreover, gm and subthreshold slope have been improved with La2O3. 1/f noise measurement has revealed that HfO2 gated MOSFET incorporating La2O 3 layer reduces the noise level .",
author = "Hiroki Fujisawa and A. Srivastava and Kuniyuki Kakushima and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Sarkar, {C. K.} and Hiroshi Iwai",
year = "2009",
doi = "10.1149/1.3096424",
language = "English",
isbn = "9781615676460",
series = "ECS Transactions",
number = "1 PART 1",
pages = "39--42",
booktitle = "ECS Transactions - ISTC/CSTIC 2009 (CISTC)",
edition = "1 PART 1",
note = "ISTC/CSTIC 2009 (CISTC) ; Conference date: 19-03-2009 Through 20-03-2009",
}