@inproceedings{25fd15441e5c4897932bdc8150cb7eef,
title = "Electrical characterization of MOS memory devices with self-assembled tungsten nano-dots dispersed in silicon nitride",
abstract = "Crystallized W-NDs dispersed in silicon nitride were prepared by self-assembled nanodot deposition (SAND) with extremely high density (1.3×1013/cm2) and small size (1-1.5nm), successfully. XPS results show that the high metallic states of tungsten are remained after 800°C anneal due to the surround silicon nitride. MOS memory capacitor with W-NDs floating gate and HfO2 blocking dielectric was fabricated. A hysteresis memory window of ∼ 1.0V is observed under low sweeping gate voltage of ±5V. A maximum memory window as large as 29V was obtained with sweeping gate voltage of ±23V, suggesting that it is a good candidate for multi-bit nonvolatile memory application.",
author = "Y. Pei and C. Yin and M. Nishijima and T. Kojima and H. Nohira and T. Fukushima and T. Tanaka and M. Koyanagi",
year = "2009",
doi = "10.1149/1.3096423",
language = "English",
isbn = "9781615676460",
series = "ECS Transactions",
number = "1 PART 1",
pages = "33--37",
booktitle = "ECS Transactions - ISTC/CSTIC 2009 (CISTC)",
edition = "1 PART 1",
note = "ISTC/CSTIC 2009 (CISTC) ; Conference date: 19-03-2009 Through 20-03-2009",
}