Electrical characterization of MOS memory devices with self-assembled tungsten nano-dots dispersed in silicon nitride

Y. Pei, C. Yin, M. Nishijima, T. Kojima, H. Nohira, T. Fukushima, T. Tanaka, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystallized W-NDs dispersed in silicon nitride were prepared by self-assembled nanodot deposition (SAND) with extremely high density (1.3×1013/cm2) and small size (1-1.5nm), successfully. XPS results show that the high metallic states of tungsten are remained after 800°C anneal due to the surround silicon nitride. MOS memory capacitor with W-NDs floating gate and HfO2 blocking dielectric was fabricated. A hysteresis memory window of ∼ 1.0V is observed under low sweeping gate voltage of ±5V. A maximum memory window as large as 29V was obtained with sweeping gate voltage of ±23V, suggesting that it is a good candidate for multi-bit nonvolatile memory application.

Original languageEnglish
Title of host publicationECS Transactions - ISTC/CSTIC 2009 (CISTC)
Pages33-37
Number of pages5
Edition1 PART 1
DOIs
Publication statusPublished - 2009 Dec 1
EventISTC/CSTIC 2009 (CISTC) - Shanghai, China
Duration: 2009 Mar 192009 Mar 20

Publication series

NameECS Transactions
Number1 PART 1
Volume18
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherISTC/CSTIC 2009 (CISTC)
CountryChina
CityShanghai
Period09/3/1909/3/20

ASJC Scopus subject areas

  • Engineering(all)

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