Electrical characterization of La₂O₃-gated metal oxide semiconductor field effect transistor with mg incorporation

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Oxide Thickness 100%
• Field-Effect Transistor 100%
• Electric Potential 50%
• Gate Oxide 50%
• Electric Field 50%
• Scattering 50%
• Evaluation 50%
• Density 50%

Physics

• Metal Oxide Semiconductor 100%
• Electric Fields 50%
• Electric Potential 50%
• Dielectrics 50%
• Scattering 50%
• Threshold Voltage 50%
• Evaluation 50%
• Retarding 50%
• Mobility 50%

Material Science

• Characterization 50%
• Dielectric Material 50%
• Electrical Property 50%