Electrical characterization of doped silicon using high-frequency electromagnetic waves

Yang Ju, Yasushi Ohno, Hitoshi Soyama, Masumi Saka

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A method for electrical characterization of doped silicon in a contactless fashion using high-frequency electromagnetic waves was presented. A focusing sensor was used to focus a 110 GHz microwave on the surface of a silicon wafer. The amplitude and phase of the reflection coefficient of the microwave signal were measured, by which electrical conductivity of the wafer was determined quantitatively, independent of the permittivity and thickness of the wafer. The conductivity obtained by this method agrees well with that measured by the conventional four-point-probe method.

Original languageEnglish
Pages (from-to)123-124
Number of pages2
JournalJournal of Materials Science and Technology
Issue numberSUPPL.
Publication statusPublished - 2004 Dec 1


  • Conductivity
  • Doped silicon
  • Microwave
  • Quantitative evaluation

ASJC Scopus subject areas

  • Ceramics and Composites
  • Mechanics of Materials
  • Mechanical Engineering
  • Polymers and Plastics
  • Metals and Alloys
  • Materials Chemistry


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