Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application

T. Kawanago, K. Tachi, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

This study reports the electrical characteristics of La-Sc oxides complex and effect of nitrogen incorporation for applications to high-k gate stack. We found that Vfb can be controlled by the ScO concentration. Moreover, large bumps in C-V curves, which indicate high interfacial state density, can be suppressed with large ScO concentration. nMOSFETs using the La-Sc oxides complex in the gate stack are fabricated. In addition, nitrogen incorporation into the La-Sc oxide films was fond to be useful to suppress the EOT growth during annealing at high temperatures.

Original languageEnglish
Pages (from-to)2235-2238
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
Publication statusPublished - 2007 Sep
Externally publishedYes

Keywords

  • High-k
  • MOSFET
  • Rare earth oxides
  • V shift

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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