We successfully fabricated high quality cubic AlN/GaN heterostructures on 3C-SiC substrates by radio-frequency plasma assisted molecular beam epitaxy, and characterized their electrical properties for the first time. The Hall mobility value of 1290 cm2/Vs was obtained at room temperature, and it drastically increased to 7330 cm2/Vs at 100 K. These values as well as other electrical characterization results suggest the generation of a two-dimensional electron gas.
|Number of pages||4|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - 2001 Nov 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics