TY - JOUR
T1 - Electrical characterization at cubic AlN/GaN heterointerface grown by radio-frequency plasma-assisted molecular beam epitaxy
AU - Kitamura, T.
AU - Ishida, Y.
AU - Shen, X. Q.
AU - Nakanishi, H.
AU - Chichibu, S. F.
AU - Shimizu, M.
AU - Okumura, H.
PY - 2001/11/1
Y1 - 2001/11/1
N2 - We successfully fabricated high quality cubic AlN/GaN heterostructures on 3C-SiC substrates by radio-frequency plasma assisted molecular beam epitaxy, and characterized their electrical properties for the first time. The Hall mobility value of 1290 cm2/Vs was obtained at room temperature, and it drastically increased to 7330 cm2/Vs at 100 K. These values as well as other electrical characterization results suggest the generation of a two-dimensional electron gas.
AB - We successfully fabricated high quality cubic AlN/GaN heterostructures on 3C-SiC substrates by radio-frequency plasma assisted molecular beam epitaxy, and characterized their electrical properties for the first time. The Hall mobility value of 1290 cm2/Vs was obtained at room temperature, and it drastically increased to 7330 cm2/Vs at 100 K. These values as well as other electrical characterization results suggest the generation of a two-dimensional electron gas.
UR - http://www.scopus.com/inward/record.url?scp=0035540232&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035540232&partnerID=8YFLogxK
U2 - 10.1002/1521-3951(200111)228:2<599::AID-PSSB599>3.0.CO;2-F
DO - 10.1002/1521-3951(200111)228:2<599::AID-PSSB599>3.0.CO;2-F
M3 - Article
AN - SCOPUS:0035540232
SN - 0370-1972
VL - 228
SP - 599
EP - 602
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 2
ER -