Electrical characterization at cubic AlN/GaN heterointerface grown by radio-frequency plasma-assisted molecular beam epitaxy

T. Kitamura, Y. Ishida, X. Q. Shen, H. Nakanishi, S. F. Chichibu, M. Shimizu, H. Okumura

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We successfully fabricated high quality cubic AlN/GaN heterostructures on 3C-SiC substrates by radio-frequency plasma assisted molecular beam epitaxy, and characterized their electrical properties for the first time. The Hall mobility value of 1290 cm2/Vs was obtained at room temperature, and it drastically increased to 7330 cm2/Vs at 100 K. These values as well as other electrical characterization results suggest the generation of a two-dimensional electron gas.

Original languageEnglish
Pages (from-to)599-602
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume228
Issue number2
DOIs
Publication statusPublished - 2001 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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