Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

Material Science

• Strain 100%
• Liquid Films 16%
• Thermal Chemical Vapor Deposition 11%
• Electrical Property 11%
• Buffer Layer 5%
• Thick Films 5%
• Hole Mobility 5%

Engineering

• Buffer Layer 5%
• Enhancement 5%
• Device Performance 5%
• Film Surface 5%
• Mobility Enhancement 5%
• Substrates 5%
• Thickness 5%
• Heating 5%

Physics

• Electron Cyclotron Resonance 11%
• Thick Films 5%
• Substrates 5%
• Value 5%
• Heating 5%